Zobrazeno 1 - 10
of 91
pro vyhledávání: '"J.J. Whalen"'
Autor:
Etienne Sicard, J.J. Whalen, Osami Wada, S. Ben Dhia, Mohamed Ramdani, Todd H. Hubing, M. Coenen, Alexandre Boyer
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility
IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers, 2009, 51 (1), pp.78-100. ⟨10.1109/TEMC.2008.2008907⟩
IEEE Transactions on Electromagnetic Compatibility, 2009, 51 (1), pp.78-100. ⟨10.1109/TEMC.2008.2008907⟩
IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers, 2009, 51 (1), pp.78-100. ⟨10.1109/TEMC.2008.2008907⟩
IEEE Transactions on Electromagnetic Compatibility, 2009, 51 (1), pp.78-100. ⟨10.1109/TEMC.2008.2008907⟩
International audience; Throughout the decades of continuous advances in semiconductor technology, from the discrete devices of the late 1950s to today's billon-transistor system-on-chip, there have always been concerns about the ability of component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a672bf13955e349067312ffbe473d610
https://hal.archives-ouvertes.fr/hal-02523680
https://hal.archives-ouvertes.fr/hal-02523680
Publikováno v:
MTT-S International Microwave Symposium Digest.
Microwave nsec pulse burnout data have been measured at 9 GHz for three 1 micron gate MESFETs. Values of incident pulse power and absorbed energy required to cause burnout are presented and discussed. Also discussed are the dominant failure modes for
Autor:
J.J. Whalen, R.T. Kemerley
Publikováno v:
MTT-S International Microwave Symposium Digest.
X-Band microsecond pulse, millisecond pulse, and CW burnout data have been measured for GaAs MESFETs. Values of incident pulse power required to cause burn-out are presented and discussed.
Autor:
H. Ghadamabadi, J.J. Whalen
Publikováno v:
National Symposium on Electromagnetic Compatibility.
A description is given of an investigation to determine statistical variations for radio frequency interference (RFI) demodulation responses in operational amplifier (op amp) circuits. 50% amplitude-modulated (AM) RF signals were injected into the op
Autor:
K. Liu, J.J. Whalen
Publikováno v:
IEEE 1988 International Symposium on Electromagnetic Compatibility.
A model for predicting the radiofrequency interference (RFI) susceptibility of CMOS circuits at the design stage, using SPICE, is reported on. The circuit investigated is the RCA CD4007A, which contains three CMOS pairs of n-MOSFETs and p-MOSFETs, in
Autor:
J.J. Whalen
Publikováno v:
1993 International Symposium on Electromagnetic Compatibility.
The development and current status of questions for the NARTE EMC (electromagnetic compatibility) credentials Certification Exam are reviewed. The current question classification scheme which the author developed and how it has been used to prepare N
Autor:
H. Ghadamabadi, J.J. Whalen
Publikováno v:
IEEE 1991 International Symposium on Electromagnetic Compatibility.
The demodulation RFI responses of an inverting operational amplifier (op amp) circuit and a noninverting op amp circuit are compared. The intended voltage gain of the inverting op amp circuit is A/sub 1/=-R2/R1=-10. The intended linear voltage gain o
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Autor:
V.A. Pogrebnyak, J.J. Whalen
Publikováno v:
Electronics Letters. 43:226
This experimental investigation reveals a new mechanism for controlling microwave transmission in periodically corrugated waveguide. The measurements show that location of the stopband in the frequency spectrum as well as its width depends on the rel
Akademický článek
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