Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J.J. Ojha"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1949-1957
A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain control and clock and data recovery circuit (CDR) with a binary-type phase-locked loop, 1:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed55618fb073da90164c93800f37dea7
https://doi.org/10.1109/4.890309
https://doi.org/10.1109/4.890309
Publikováno v:
IEEE Transactions on Electron Devices. 40:1154-1160
The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are correlated to the negative differential resistance (NDR) region typically observed in the current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a331a4e20b8cd41003fb09b563e396c3
https://doi.org/10.1109/16.214743
https://doi.org/10.1109/16.214743
Publikováno v:
IEEE Electron Device Letters. 15:57-59
The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb5835930a6b67e402b032b398e46fcd
https://doi.org/10.1109/55.285374
https://doi.org/10.1109/55.285374
Publikováno v:
Proceedings of LEOS '93.
A novel optoelectronic device has recently been developed using an inversion channel heterostructure. This device, the bistable field effect transistor (BISFET), has been shown to exhibit electrical bistability. In this work, we describe the optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d49ddc8613267a5e21da763c0dd491a
https://doi.org/10.1109/leos.1993.379280
https://doi.org/10.1109/leos.1993.379280
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f013d78f512972669713178188cb03e4
https://doi.org/10.1109/isscc.2000.839687
https://doi.org/10.1109/isscc.2000.839687
Publikováno v:
IEEE Electron Device Letters. 14:385-387
The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel structure. It contains a positive feedback loop between the gate and sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c042155b4a366be42a42ee94650f71
https://doi.org/10.1109/55.225587
https://doi.org/10.1109/55.225587
Publikováno v:
Electronics Letters. 30:822-823
The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported for the first time. The hysteresis in the previously reported source-loop transitions is found to increase from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d623fe92e209612d046b2a00c31ddc9e
https://doi.org/10.1049/el:19940441
https://doi.org/10.1049/el:19940441
Autor:
J.J. Ojha, John G. Simmons
Publikováno v:
Electronics Letters. 29:1028-1029
The operation of a novel heterostructure device, the bistable field effect transistor (BISFET), is described. This device contains a positive feedback loop between the gate and source terminals, which is expected to lead to transitions between high a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b4ce30e073f22ffbf01707a04f3b00
https://doi.org/10.1049/el:19930687
https://doi.org/10.1049/el:19930687
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Akademický článek
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