Zobrazeno 1 - 10
of 31
pro vyhledávání: '"J.J. Morikuni"'
Publikováno v:
Journal of Lightwave Technology. 13:1093-1103
Our prototype of a fully-functional asynchronous transfer mode (ATM) switch validates the design of a 128 Gb/s optoelectronic ATM switch. Optoelectronics, rather than all optical components, are used to simultaneously address all of the specific requ
Publikováno v:
IEEE Circuits and Devices Magazine. 11:12-18
The computer-aided design tool can be used in choosing design parameter values that help lower the cost and increase reliability. Good tools are also necessary to minimize the length of the design cycle to bring products to market in a timely manner.
Publikováno v:
Journal of Lightwave Technology. 12:1174-1184
The standard theory for photoreceiver noise unrealistically defines the system transfer function solely in terms of the input and output pulse shapes, based on the assumption that equalization is provided at the receiver output. Most photoreceivers r
Autor:
K. Nummila, Kangguo Cheng, Ilesanmi Adesida, M. Tong, J.-W. Seo, A.A. Ketterson, J.J. Morikuni, Sung-Mo Kang
Publikováno v:
IEEE Transactions on Electron Devices. 40:1406-1416
The design, fabrication, and characterization of a 0.85- mu m sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFETs) and
Autor:
J.J. Morikuni, Sung-Mo Kang
Publikováno v:
Journal of Lightwave Technology. 10:1426-1437
An analytical method for designing monolithic, broadband transimpedance amplifiers with inductive peaking is presented. Closed-form, symbolic solutions for the small-signal transimpedance are developed the effects of different types of inductive peak
Publikováno v:
IEEE Photonics Technology Letters. 4:73-76
A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of
Autor:
J.J. Morikuni, Sung-Mo Kang
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Autor:
Ilesanmi Adesida, J.-M. Seo, M. Tong, A.A. Ketterson, Sung-Mo Kang, K.Y. Cheng, J.J. Morikuni, K. Nummila
Publikováno v:
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems.
The authors present a high-speed optoelectronic photoreceiver, specifically designed for use in optical interconnections. This photoreceiver is composed of an MSM (metal-semiconductor-metal) photodetector coupled with a HEMT (high electron mobility t
Autor:
Sung-Mo Kang, J.J. Morikuni
Publikováno v:
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems.
Presents a theoretical treatment of inductive peaking. Although the analysis is general, it is specifically targeted for the design of monolithic broadband transimpedance amplifiers in photoreceivers. The authors derive closed-form, symbolic solution
Autor:
M. Tong, Ilesanmi Adesida, A.A. Ketterson, K. Nummila, Sung-Mo Kang, J.J. Morikuni, J.-W. Seo
Publikováno v:
Proceedings of LEOS '93.
This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement- an