Zobrazeno 1 - 10
of 64
pro vyhledávání: '"J.J. Bucchignano"'
Autor:
Phaedon Avouris, Lynne Gignac, Douglas M. Bishop, Damon B. Farmer, Abram L. Falk, J.J. Bucchignano, George S. Tulevski, Po-Hsun Ho, Shu-Jen Han
In cavity quantum electrodynamics, optical emitters that are strongly coupled to cavities give rise to polaritons with characteristics of both the emitters and the cavity excitations. We show that carbon nanotubes can be crystallized into chip-scale,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e8ea2737ab0de2ab1a94e2fcee013eb
Autor:
Sampath Purushothaman, Steven E. Steen, Lidija Sekaric, John M. Hergenrother, J. Patel, Inna V. Babich, James P. Doyle, Mary Beth Rothwell, Michael J. Rooks, Jim R. Brancaccio, Roy Yu, Ron Nunes, J.J. Bucchignano, Anna W. Topol, R. Viswanathan, David M. Fried, Sharee J. McNab
Publikováno v:
Microelectronic Engineering. 83:754-761
Moore's law continues to prescribe ever smaller device dimensions with each new device node. While the new device nodes are scheduled at even pace, the innovation required to obtain commensurate device performance is greater with every device node. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6c9f53250038836d367bb1ac0a9f9e5
https://doi.org/10.1016/j.mee.2006.01.181
https://doi.org/10.1016/j.mee.2006.01.181
Autor:
Kathryn W. Guarini, Guy M. Cohen, H.J. Hovel, J. Benedict, C. Cabral, K. Petrarca, Diane C. Boyd, Raymond M. Sicina, J.H. Yoon, J. Newbury, P. Kozlowski, Paul M. Solomon, Hon-Sum Philip Wong, Christopher P. D'Emic, A. Krasnoperova, M. Ronay, K.K. Chan, V. Ku, O. Dokumaci, Christian Lavoie, Inna V. Babich, J.J. Bucchignano, E.C. Jones, J. Treichler, Y. Zhang
Publikováno v:
IEEE Circuits and Devices Magazine. 19:48-62
A planar self-aligned double-gate MOSFET process has been implemented where a unique sidewall source/drain structure (S/D) permits self-aligned patterning of the back-gate layer after the S/D structure is in place. This allows coupling the silicon th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76dcf51997d0234eec7ae42db2413164
https://doi.org/10.1109/mcd.2003.1175108
https://doi.org/10.1109/mcd.2003.1175108
Autor:
Christian Lavoie, Francois Pagette, Zhen Zhang, John A. Ott, D. Klaus, Christopher P. D'Emic, Dae-Gyu Park, Bin Yang, M. Guillorn, Siegfried L. Maurer, G. Zuo, Q.C. Ouyang, Marinus Hopstaken, Paul M. Solomon, A. Pyzyna, Conal E. Murray, Yu Zhu, J.J. Bucchignano, Ahmet S. Ozcan, J. Newbury, K.-L. Lee, J. Silverman, W. Song, V Chhabra, John Bruley, Wilfried Haensch
Publikováno v:
IEEE Electron Device Letters. 31:731-733
An extremely low contact resistivity of 6-7 × 10-9 Ω·cm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide follo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46de58c1db6ee46e19fe42e7dd5181ab
https://doi.org/10.1109/led.2010.2048992
https://doi.org/10.1109/led.2010.2048992
Autor:
M. Guillorn, Deqiang Wang, Steve Rossnagel, Lynne Gignac, Qinghuang Lin, Sung-Wook Nam, Ajay K. Royyuru, Robert L. Bruce, Gustavo Stolovitzky, P. J. Litwinowicz, Armand Galan, Dirk Pfeiffer, Evan G. Colgan, Ronald D. Goldblatt, S. Papa Rao, J.J. Bucchignano, Markus Brink, Michael F. Lofaro, Chao Wang, W. H. Advocate, Elizabeth A. Duch, E. Kratschmer, C. M. Breslin, John M. Cotte, William Henry Price, Christopher V. Jahnes, Stas Polonsky, Hongbo Peng, Eric A. Joseph
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We report sub-20 nm sacrificial nanochannels that enable stretching and translocating single DNA molecules. Sacrificial silicon nano-structures were etched with XeF2 to form nanochannels. Translocations of linearized DNA single molecules were imaged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7009e4a7a92742f8a8752e24815c32d7
https://doi.org/10.1109/iedm.2013.6724627
https://doi.org/10.1109/iedm.2013.6724627
Autor:
Ghavam G. Shahidi, Keith E. Fogel, J.J. Bucchignano, J. P. de Souza, D. K. Sadana, Yuan-Chen Sun, Edward W. Kiewra
Publikováno v:
IEEE Electron Device Letters. 30:5-7
Long and short buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm2/ V middots. Short-channel MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb32d57f3fa7073c79230a8766cd935d
https://doi.org/10.1109/led.2008.2008827
https://doi.org/10.1109/led.2008.2008827
Autor:
D. Klaus, Sebastian Engelmann, Joy Cheng, Hsinyu Tsai, Hiroyuki Miyazoe, Lynne Gignac, Eric A. Joseph, Sarunya Bangsaruntip, Isaac Lauer, Michael A. Guillorn, Dan Sanders, J.J. Bucchignano
Publikováno v:
SPIE Proceedings.
A study on the optimization of etch transfer processes using 200-mm-scale production type plasma etch tools for circuit relevant pat- terning in the sub-30-nm pitch regime using directed self-assembly (DSA) line-space patterning is presented. This wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eec4c020f33a89a113870b4122453664
https://doi.org/10.1117/12.2014259
https://doi.org/10.1117/12.2014259
Autor:
Nicholas C. M. Fuller, Martin Glodde, Hiroyuki Miyazoe, Sebastian Engelmann, Ryan M. Martin, W. Graham, D. Klaus, E. Sikorski, Robert L. Bruce, J.J. Bucchignano, M. Guillorn, Hsinyu Tsai, E. Kratschmer, Markus Brink
Publikováno v:
SPIE Proceedings.
CMOS device patterning for aggressively scaled pitches (smaller than 80nm pitch) faces many challenges. Maybe one of the most crucial issues during device formation is the pattern transfer from a soft mask (carbon based) material into a hard mask mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c244cfa767f0a0fb7c597f546e600892
https://doi.org/10.1117/12.916447
https://doi.org/10.1117/12.916447
Publikováno v:
Microelectronic Engineering. 21:409-417
This article describes an exploratory study of miniaturization of metal oxide semiconductor field effect transistors (MOSFETs) to 100nm dimensions. The study has provided a first demonstration of MOSFETs which meet 100nm design rules for all critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af56c1e5f4cbc36ae7cfc3000c585a5
https://doi.org/10.1016/0167-9317(93)90102-b
https://doi.org/10.1016/0167-9317(93)90102-b
Autor:
G. Zuo, Marinus Hopstaken, Siegfried L. Maurer, A. Pyzyna, D. Klaus, Bin Yang, Ahmet S. Ozcan, J. Newbury, Wilfried Haensch, Christian Lavoie, Q.C. Ouyang, Francois Pagette, J. Silverman, A. Ray, Zhen Zhang, D-G. Park, J.J. Bucchignano, Paul M. Solomon, John A. Ott, Christopher P. D'Emic, M. Guillorn, John Bruley, Conal E. Murray, W. Song, Yu Zhu, K.-L. Lee
Publikováno v:
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.
In this work we present a potential solution for forming ultra-shallow junctions with extremely low contact resistivities in which dopants are implanted into silicides and diffused to the semiconductor interface using low temperature anneals. Convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e323cd1be9d82295bbb652418fd64fa
https://doi.org/10.1109/vtsa.2010.5488908
https://doi.org/10.1109/vtsa.2010.5488908