Zobrazeno 1 - 10
of 104
pro vyhledávání: '"J.H. Liao"'
Akademický článek
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Autor:
J.H. Liao, Tsai, Yoshitaka Bessho, Wei-Cheng Huang, Manuel Maestre-Reyna, T.C. Hsiao, Tong-You Wade Wei
Publikováno v:
ChemBioChem.
Human tumor necrosis factor receptor associated factor (TRAF)-interacting protein, with a forkhead-associated domain (TIFA), is a key regulator of NF-κB activation. It also plays a key role in the activation of innate immunity in response to bacteri
Publikováno v:
Animal Nutrition and Feed Technology. 20:243
Akademický článek
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Publikováno v:
Ceramic Materials for Energy Applications VI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fb9ec3d8a195601c65aab8b4b34cbf
https://doi.org/10.1002/9781119321774.ch12
https://doi.org/10.1002/9781119321774.ch12
Autor:
Hsueh Hsing Liu, Jr-Hau He, L.C. Huang, Kun Yu Lai, C.C. Lai, Jen-Inn Chyi, G.Y. Lee, Te Yuan Chung, C.C. Chang, L.K. Yeh, J.H. Liao, Cheng Yi Liu, L.C. Cheng
Publikováno v:
Solar Energy Materials and Solar Cells. 117:54-58
InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under
Autor:
J.H. Liao, K.C. Chen, Chun Ling Chiang, Chih Yuan Lu, C.M. Cheng, L.W. Yang, T.H. Yang, J.Y. Hsieh
Publikováno v:
Solid State Phenomena. 187:67-70
In dual gate process, wet strip is an important procedure to remove the photoresist. Two wet strip methods of spinning-dry and batch type were evaluated in this study. Several methods were applied to measure the surface charging density [1, 2]. The Q
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
Autor:
Weien Huang, Kai Dong Xu, Guang Yaw Hwang, Autumn Yeh, Mark Lin, David Lou, Gowri Kamarthy, S.F. Tzou, J.H. Liao, Eason Chen, Amulya Athayde
Publikováno v:
Solid State Phenomena. 187:57-60
Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consol
Autor:
Chih Yuan Lu, H.J. Lin, J.Y. Hsieh, C.C. Yeh, J.H. Liao, T.H. Yang, Chun Ling Chiang, K.C. Chen, C.M. Cheng, L.W. Yang
Publikováno v:
Solid State Phenomena. 187:49-52
The present study aims at polysilicon material fill-in at re-entrant profile at flash memory product. The void was observed after polysilicon fill-in. In order to prevent the void formation, the multi-step process of deposition wet-etching deposition
Autor:
J.H. Liao, Jian She Tang, John T.C. Lee, Joe Lai, Wei Lu, Cheng Ming Weng, Ren Huang, Ching Hwa Weng, Han Wen Chen, Mei Qi Wang, Miao Chun Lin
Publikováno v:
Solid State Phenomena. 134:359-362
As 65nm technology in mass production and 45nm technology under development, post etch ash and cleaning faces new challenges with far more stringent requirements on surface cleanliness and materials loss. The introduction and integration of new mater