Zobrazeno 1 - 10
of 23
pro vyhledávání: '"J.G. Wasserbauer"'
Publikováno v:
IEEE Journal of Quantum Electronics. 28:2186-2202
Mode-locked semiconductor lasers which incorporate multiple contacting segments are found to give improved performance over single-segment designs. The functions of gain, saturable absorption, gain modulation, repetition rate tuning, wavelength tunin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f1a3c36bdbbb4a7f3590e083b4d22e
https://doi.org/10.1109/3.159527
https://doi.org/10.1109/3.159527
Publikováno v:
IEEE Journal of Quantum Electronics. 28:2230-2241
Carrier transport has a significant effect on the high-speed characteristics of semiconductor lasers. The authors show theoretically and experimentally that the low frequency rolloff and excess increase of damping due to carrier transport significant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adc5e0f14346ff574dfb79674f6b5d8
https://doi.org/10.1109/3.159530
https://doi.org/10.1109/3.159530
Autor:
D. J. Derickson, K. Giboney, John E. Bowers, A. Mar, J.R. Karin, J.G. Wasserbauer, Roger Helkey
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Research on integrated optical devices has often focussed on complex structures and complicated processing techniques [1,2]. However, a variety of integmted optoelectrOnic devices can be fabricated fiom a simple semiconductor laser diode waveguide pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ee7fccee6dc7ac6678c84956cfd97f
https://doi.org/10.1109/leosst.1992.697463
https://doi.org/10.1109/leosst.1992.697463
Autor:
D.W. Kisker, J. Smith, R.L. Naone, J.J. Hindi, S.R. Prakash, S.A. Feld, L.M.F. Chirovsky, M.J. Dalberth, L.R. Thompson, D. Galt, A.W. Jackson, J.G. Wasserbauer
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
In this work, we have reported the first arrays of GaAs-based 1.3 micron VCSELs and described their operation under both DC and modulated conditions. Excellent uniformity of key operating parameters was observed. In addition, we have demonstrated exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f307b14cebc9f9d1f4c9364046a637
https://doi.org/10.1109/ofc.2002.1036267
https://doi.org/10.1109/ofc.2002.1036267
Autor:
M.V. Crom, D.W. Kisker, A.W. Jackson, L.R. Thompson, L.M.F. Chirovsky, S.A. Feld, R.L. Naone, J.G. Wasserbauer, D. Galt, M.D. Lange, S.R. Prakash
Publikováno v:
IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers..
In addition to the significant impact that VCSELs have on design, performance and cost of fiber optic modules, there is a potential for high density integration for SONET in the form of 1.3 /spl mu/m InGaAsN VCSEL arrays.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::812a90472e15d0d5aff5ba2a6a6b7240
https://doi.org/10.1109/leosst.2002.1027609
https://doi.org/10.1109/leosst.2002.1027609
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The authors consider electrical and optical signal generation techniques using passively and hybridly mode-locked semiconductor lasers with intra-waveguide saturable absorbers. Microwave and millimeter-wave signals can be generated using mode-locked
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1c781b9a1a9a8e453f9f3929b75024
https://doi.org/10.1109/mwsym.1992.188095
https://doi.org/10.1109/mwsym.1992.188095
Publikováno v:
International Conference on Indium Phosphide and Related Materials.
Semi-insulating (SI) planar buried heterostructure (SIPBH) lasers, designed to minimize device parasitics, have been fabricated for high-speed operation. The I-V characteristics of the Fe-doped SI InP employed for the current blocking layers were exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5011bd331e07740300584c6fd88fbcc1
https://doi.org/10.1109/iciprm.1990.203009
https://doi.org/10.1109/iciprm.1990.203009
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.