Zobrazeno 1 - 10
of 556
pro vyhledávání: '"J.G. Simmons"'
Autor:
J.G. Simmons, O.S. Schwartz, K. Bray, C. Deane, E. Pozzi, S. Richmond, J. Smith, N. Vijayakumar, M.L. Byrne, M.L. Seal, M.B.H. Yap, N.B. Allen, S.L. Whittle
Publikováno v:
BMC Pediatrics, Vol 17, Iss 1, Pp 1-14 (2017)
Abstract Background Extant research has demonstrated that parenting behaviour can be a significant contributor to the development of brain structure and mental health during adolescence. Nonetheless, there is limited research examining these relation
Externí odkaz:
https://doaj.org/article/15fab2b6ec6e4e46925ce9c2af90d611
Autor:
S. Friedel, S.L. Whittle, N. Vijayakumar, J.G. Simmons, M.L. Byrne, O.S. Schwartz, N.B. Allen
Publikováno v:
Developmental Cognitive Neuroscience, Vol 14, Iss C, Pp 62-70 (2015)
Adolescence is a critical period of development, in which the increasing social and cognitive demands of independence need to be met by enhanced self-regulatory abilities. The cultivation of mindfulness has been associated with improved self-regulati
Externí odkaz:
https://doaj.org/article/2b853e7c99534c518fa3c2c328ce4409
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
J.G. Simmons, O.S. Schwartz, K. Bray, C. Deane, E. Pozzi, S. Richmond, J. Smith, N. Vijayakumar, M.L. Byrne, M.L. Seal, M.B.H. Yap, N.B. Allen, S.L. Whittle
Families and Childhood Transitions Study (FACTS) Detailed Measures File. (PDF 875 kb)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::027322cf556010213c95106b19909f09
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:659-664
This paper reports on an investigation on the light–current, relative intensity noise, and chirp variations of life-tested InGaAsP/InP multiquantum-well buried heterostructure (BH) laser diodes (LDs). The devices have been stressed at highly accele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11d6f13c9d1048013dd4e5ee1681729
https://doi.org/10.1109/tdmr.2005.860564
https://doi.org/10.1109/tdmr.2005.860564
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Journal of Quantum Electronics. 34:535-539
The results of a large-scale study of the temperature sensitivity of the CW threshold current are presented. The well number and length are systematically varied in a set of 175 lasers, with multiple identical devices to ensure the statistical validi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e493ad5f45db8627f9fa889fa2b34d77
https://doi.org/10.1109/3.661463
https://doi.org/10.1109/3.661463
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1360-1368
Experimental measurements of external differential efficiency on 0.7% compressively strained multiquantum-well (MQW) ridge waveguide lasers operating at 1.3 /spl mu/m are presented. The lasers have the number of quantum wells (QW's) varying from 5 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda7e9baa4897db28a6cc252fa037549
https://doi.org/10.1109/3.605559
https://doi.org/10.1109/3.605559
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:461-465
Compositional disorder and interdiffusion in lattice-matched and strained-layer InxGa1−x As InP multiple quantum wells (MQWs), subjected to ion implantation and subsequent thermal annealing, have been studied. Measurements have shown that MQWs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbf542ec458e7b67a6086988d52c6be
https://doi.org/10.1016/0168-583x(95)00753-9
https://doi.org/10.1016/0168-583x(95)00753-9
Publikováno v:
IEEE Journal of Quantum Electronics. 31:1308-1314
We present the first comprehensive experimental and theoretical analyses of spontaneous electrical and optical oscillations that occur when the InP-InGaAsP lasing optoelectronic switch (LOES) is biased in or near the negative differential resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8dc75fa65b5954f47429f1fe2751b38
https://doi.org/10.1109/3.391096
https://doi.org/10.1109/3.391096