Zobrazeno 1 - 10
of 54
pro vyhledávání: '"J.G. Fiorenza"'
Autor:
Mark S. Rodder, K. Matthews, Christopher J. Vineis, C. W. Leitz, M. Carroll, Vicky K. Yang, T. A. Langdo, Rick L. Wise, G. Braithwaite, J.G. Fiorenza, Puneet Kohli, R. Westhoff, Anthony Lochtefeld, John A. Carlin
Publikováno v:
Thin Solid Films. 513:300-306
We discuss a method for fabricating strained Si layers via deposition directly onto planarized relaxed SiGe virtual substrates, a process termed direct regrowth (DRG). We show that a trade-off exists between surface roughness and cleanliness of the S
Publikováno v:
IEEE Transactions on Electron Devices. 53:1705-1711
This paper presents an in-depth study of the effects of substrate-surface potential on the RF power performance of laterally diffused MOSFETs (LDMOSFETs) fabricated on high-resistivity silicon-on-insulator (HR-SOI). Substrate-surface inversion and ac
Autor:
J.G. Fiorenza, C. Leitz, Mayank T. Bulsara, H. Badawi, J. Carlin, Matthew T. Currie, N. Balasubramanian, T. Lochtefeld, G. Braithwaite, Shajan Mathew, L. K. Bera, Richard Hammond, T. A. Langdo, J. Yap, F. Singaporewala
Publikováno v:
Thin Solid Films. :85-89
Effect of strained-Si thickness on electrical properties of furnace grown gate oxide has been investigated. Interface state density ( D it ) versus energy characteristics shows that D it increases with decreasing strained-Si thickness, probably due t
Autor:
Isaac Lauer, Z. Y. Cheng, Mark Somerville, Anthony Lochtefeld, Mayank T. Bulsara, T. A. Langdo, Dimitri A. Antoniadis, Christopher J. Vineis, John A. Carlin, G. Braithwaite, C. W. Leitz, M. Erdtmann, J.G. Fiorenza, Matthew T. Currie
Publikováno v:
Solid-State Electronics. 48:1357-1367
SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication
Autor:
C. W. Leitz, G. Braithwaite, F. Singaporewala, V. K. Yang, T. A. Langdo, J. Yap, H. Badawi, Mark Somerville, John A. Carlin, J.G. Fiorenza, Anthony Lochtefeld, Mayank T. Bulsara, Matthew T. Currie
Publikováno v:
Semiconductor Science and Technology. 19:L4-L8
This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both abo
Autor:
J.A. del Alamo, J.G. Fiorenza
Publikováno v:
IEEE Transactions on Electron Devices. 49:687-692
Simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage (C-V), S-parameter, and 1.9-GHz load-pull characteristics and explains differences between t
Autor:
J.G. Fiorenza, J.A. del Alamo
Publikováno v:
IEEE Electron Device Letters. 26:29-31
This paper describes the RF power performance of an LDMOSFET technology on high-resistivity silicon-on-insulator wafers. The technology has an on-state breakdown voltage of greater than 10 V, and an off-state breakdown voltage of greater than 20 V. T
Autor:
Christopher W. Leitz, H. Badawi, T. A. Langdo, Zhiyuan Cheng, I. Lauer, Mayank T. Bulsara, Anthony J. Lochtefeld, D.A. Antoniadis, M.H. Somerville, Matthew T. Currie, G. Braithwaite, J.G. Fiorenza
Publikováno v:
IEEE Electron Device Letters. 25:83-85
Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly
Publikováno v:
IEEE Electron Device Letters. 24:698-700
This letter describes a metal/polysilicon damascene gate technology for RF power LDMOSFETs. We compare the performance of SOI LDMOSFETs with metal/polysilicon damascene gates to that of identical devices with n/sup +/ polysilicon gates. The gate shee
Publikováno v:
IEEE Electron Device Letters. 22:139-141
We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integra