Zobrazeno 1 - 10
of 81
pro vyhledávání: '"J.F.M. Cillessen"'
Autor:
A.R. Balkenende, Amaia Pesquera, Johan Hendrik Klootwijk, Adrianus Johannes Maria Giesbers, J.F.M. Cillessen, P.C.P. Bouten, Amaia Zurutuza, L. van der Tempel, Alba Centeno
Publikováno v:
Solid State Communications. 229:49-52
In this work we present the effect of defects in graphene on its potential for application in flexible electronics. We visualize defects at the grain boundaries, transfer defects and local atomic defects. We show that these defects are currently dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eef260fcf0a118b67845905888b3661
https://doi.org/10.1016/j.ssc.2016.01.002
https://doi.org/10.1016/j.ssc.2016.01.002
Publikováno v:
Journal of Applied Physics. 83:888-893
We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b06450a6fd6eebb981df02c1fb4ed4
https://doi.org/10.1063/1.366773
https://doi.org/10.1063/1.366773
Publikováno v:
Journal of Applied Physics, 81(6), 2777-2783. American Institute of Physics
Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coerciv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::987424bfda535a014e906100866232c5
https://doi.org/10.1063/1.363961
https://doi.org/10.1063/1.363961
Publikováno v:
Microelectronic Engineering, 35(1-4), 71-74. Elsevier
Transparent ferroelectric field-effect transistors of oxidic thin films have been fabricated, showing a memory effect with an on/off ratio of the channel conductance of more than three orders of magnitude. The devices consist of a 10 nm n -type SnO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4480f193e08f878a989bae99413d4518
https://doi.org/10.1016/s0167-9317(96)00152-9
https://doi.org/10.1016/s0167-9317(96)00152-9
Publikováno v:
Applied Surface Science. :784-790
We present the growth of La doped SrTiO3 thin films on MgAl2O4 (100) substrates using the Pulsed Laser Deposition (PLD) technique. The crystal quality of the films was analyzed by X-Ray Diffraction (XRD) and Rutherford Backscattering Spectroscopy (RB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95764c5e2064059190ef323cc827bb21
https://doi.org/10.1016/0169-4332(95)00580-3
https://doi.org/10.1016/0169-4332(95)00580-3
Autor:
RM Wolf, Mwj Menno Prins, LF Lou Feiner, K.-O. Grosse-Holz, Pwm Paul Blom, J.F.M. Cillessen, Rainer Waser
Publikováno v:
MRS Online Proceedings Library, 401, 67-72. Springer
Sb doped SnO2 has been deposited on polished ceramic Al2O3 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been measured as a function of temperature. A model for the electrical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84ded22e33515c2abff88e96f01cd63f
https://doi.org/10.1557/proc-401-67
https://doi.org/10.1557/proc-401-67
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 91:322-326
The incorporation of Nd ions in SrTiO 3 can be studied conveniently by means of the photoluminescence spectrum originating from the Nd 3+ ion. We have used Nd 3+ spectra obtained at liquid-helium temperatures, to study the annealing behavior of ion i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2993cc138c372ea0810bab8330a2f99a
https://doi.org/10.1016/0168-583x(94)96239-1
https://doi.org/10.1016/0168-583x(94)96239-1
Publikováno v:
Applied Surface Science. 69:212-215
La 1- x Sr x CoO 3 films have been grown highly textured on Si/SiO 2 (100) and epitaxially on MgO(100) substrates, despite the large lattice mismatch. This is confirmed by XRD pole figures and HR-TEM analyses: misfit corrections are observed in the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d89534f9bc540e17e7aae84845947a
https://doi.org/10.1016/0169-4332(93)90506-7
https://doi.org/10.1016/0169-4332(93)90506-7
Publikováno v:
Applied Physics Letters, 70(4), 458-460. American Institute of Physics
We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fa2d089f13e4b3cdbef78a6103e4fe3
https://doi.org/10.1063/1.118180
https://doi.org/10.1063/1.118180
Autor:
G. Muller, J.F.M. Cillessen, Mwj Menno Prins, Ronald Martin Wolf, Jacobus Bernardus Giesbers, K.-O. Grosse-Holz, RP Weening
Publikováno v:
Applied Physics Letters, 68(25), 3650-3652. American Institute of Physics
Applied Physics Letters, 68(25), 3650-3652
Applied Physics Letters, 68(25), 3650-3652
Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aad7e9f3275e908e3adb3d31ae93c44b
https://research.rug.nl/en/publications/008bbab5-526d-476e-bcc5-a106124e777f
https://research.rug.nl/en/publications/008bbab5-526d-476e-bcc5-a106124e777f