Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J.F. Sautereau"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:2345-2351
An approach to frequency dividers based on the nonlinear feedback control of MESFET in the forced oscillation mode is proposed. The input signal is used to control the MESFET gain, imposing oscillation conditions. A design of frequency dividers based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa832bfad68ba25f89b965dcf39cebbe
https://doi.org/10.1109/22.179900
https://doi.org/10.1109/22.179900
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
The noise properties of a microwave analog frequency divider are investigated. The division is realized with a field effect transistor (FET) in a forced oscillation mode. An appropriate model is proposed for the calculation of the output signal phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383735cea723e0fb7c118a43503b8bda
https://doi.org/10.1109/mwsym.1993.276888
https://doi.org/10.1109/mwsym.1993.276888
Publikováno v:
23rd European Microwave Conference, 1993.
Analog frequency dividers using Field Effect Transistors have been investigated with respect to various device structures (MESFET, HEMT and PHEMT). It was found that the transconductance parameter value (Idss/Vt2) essentially governs the capability o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb62d555b47592bb615c102af45fe1d5
https://doi.org/10.1109/euma.1993.336701
https://doi.org/10.1109/euma.1993.336701
Publikováno v:
Electronics Letters. 29:1514
A straightforward analytical expression of the conversion gain of a MESFET drain mixer is proposed, based on the assumption that the transconductance and drain resistance are the main nonlinearities, and on a few additional simplifications. The resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894bc26e260062a44fe0614afc262df0
https://doi.org/10.1049/el:19931009
https://doi.org/10.1049/el:19931009
Publikováno v:
Solid-State Electronics. 25:367-374
Low frequency (L.F.) noise in GaAs FETs was investigated both theoretically and experimentally. The main contribution to the overall noise at frequencies over 103 Hz was found to be flicker noise generated in the gradual region of the channel. A new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7895a8358dedbea45e038133a82771
https://doi.org/10.1016/0038-1101(82)90121-6
https://doi.org/10.1016/0038-1101(82)90121-6
Publikováno v:
1987 IEEE MTT-S International Microwave Symposium Digest.
Several identical X band cavity stabilized MESFET and HEMT oscillators are presented. Their phase noise and some other noise data are reported. Under exactly the same oscillating conditions, the MESFET oscillators exhibit the best phase noise perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c851102b1608deac1a8ee09ce20ac662
https://doi.org/10.1109/mwsym.1987.1132470
https://doi.org/10.1109/mwsym.1987.1132470
Publikováno v:
11th European Microwave Conference, 1981.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a16f66729561de3d6596ca4010b6100
https://doi.org/10.1109/euma.1981.332944
https://doi.org/10.1109/euma.1981.332944
Publikováno v:
Electronics Letters. 16:490
A high efficiency high p.p.d. GaAs f.e.t. oscillator was developed. An output power of 63 mW with an efficiency of 39.7% and a p.p.d. of 0.21 mW/?m was easily produced at 9.3 GHz using a HP FET 1101 A-HPAC 100 A. The design of this oscillator was eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b7e3f8b69f0a40dcb619a09bebcadd2
https://doi.org/10.1049/el:19800342
https://doi.org/10.1049/el:19800342
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Akademický článek
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