Zobrazeno 1 - 10
of 66
pro vyhledávání: '"J.F. Nijs"'
Publikováno v:
Solid State Phenomena. :577-582
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea8e5be1940d276557982cf4d11a30d6
https://doi.org/10.4028/www.scientific.net/ssp.67-68.577
https://doi.org/10.4028/www.scientific.net/ssp.67-68.577
Publikováno v:
Solar Energy Materials and Solar Cells. 34:237-241
In this work the improvement of the quality of the electromagnetic cold crucible cast multicrystalline silicon (EMC) material produced by Sumitomo Sitix Co. (SCC, previously Osaka Titanium Co.) by hydrogen plasma is investigated with the final goal o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6b30e1e04b25a38c84e0704b16cea3
https://doi.org/10.1016/0927-0248(94)90045-0
https://doi.org/10.1016/0927-0248(94)90045-0
Publikováno v:
International Journal of Solar Energy. 14:43-48
An overview is given of the 1992 and projected (year 2000) cost of PV-modules and systems, as obtained from different manufacturers. It is shown that the projected cost figure cannot be obtained by simply following the learning curve in a business-as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f79ada8cf7a423246efe8092ebcef48e
https://doi.org/10.1080/01425919308909795
https://doi.org/10.1080/01425919308909795
Publikováno v:
IEEE Transactions on Electron Devices. 40:938-943
Due to the different crystallographic orientations of the grains in polysilicon thin films, their grain boundaries exhibit a high density of crystallographic defects that are often electrically active. Applying the equations of the transitions betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d9903a19519a9ffbabc27e852ae79f
https://doi.org/10.1109/16.210202
https://doi.org/10.1109/16.210202
Publikováno v:
Journal of Applied Physics. 73:1773-1780
The interaction energy EirrI of arrays of dislocations with nonperiodic (or irregular) distribution is calculated. The calculations have been made for uniform‐random and Gaussian distributions of dislocations. The method used is, however, general a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a695678f611e92ab1701f08633d62c
https://doi.org/10.1063/1.353213
https://doi.org/10.1063/1.353213
Autor:
J.J. Loferski, S.C. Jain, R. Van Overstraeten, S.S. Iyer, Raya Mertens, J.F. Nijs, J. Poortmans
Publikováno v:
IEEE Transactions on Electron Devices. 40:2338-2343
Theoretical and experimental evidence is presented to show that the effective mass of holes is reduced due to strain in the Ge/sub x/Si/sub 1-x/ layers grown on Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1cbc0d2febd6887ea846c77525f8e5b
https://doi.org/10.1109/16.249484
https://doi.org/10.1109/16.249484
Publikováno v:
IEEE Electron Device Letters. 21:274-276
Selective phosphorous diffusion is performed in Si to simultaneously form shallow n/sup +/p junctions of different depths in the submicron range by rapid thermal annealing (RTA). Low temperature (400/spl deg/C) atmospheric pressure chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5cc0ca988ce6c0e569e640a13ccc7e1
https://doi.org/10.1109/55.843148
https://doi.org/10.1109/55.843148
Publikováno v:
Journal of Applied Physics. 68:143-155
This paper reports on the properties of doped and undoped amorphous silicon films deposited by the homogeneous chemical vapor deposition (HOMOCVD) technique. It is shown that good quality films can be grown at reasonable deposition rates of 100–150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15bf5f770a3d207a903d699dbd5d6e1
https://doi.org/10.1063/1.347106
https://doi.org/10.1063/1.347106
Publikováno v:
IEEE Transactions on Electron Devices. 37:702-707
The use of screen printing for the back-side metallization of amorphous-silicon solar cells on glass is proposed. Compared with the conventional aluminum evaporation process, screen printing is attractive because if offers high throughput and because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceba7c04ab933336e031f6ad69191c11
https://doi.org/10.1109/16.47775
https://doi.org/10.1109/16.47775
Publikováno v:
Thin Solid Films. 184:139-146
We present a vapour phase epitaxy and a solid phase epitaxy growth technique based on r.f. plasma chemical vapour diposition for epitaxial deposition of P-doped silicon at temperatures below 600°C. Single-crystal silicon layers with a resistivity do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cee1398ec27646d14b05eb6c223853b
https://doi.org/10.1016/0040-6090(90)90407-5
https://doi.org/10.1016/0040-6090(90)90407-5