Zobrazeno 1 - 10
of 54
pro vyhledávání: '"J.F. Michaud"'
Autor:
Fabrice Letertre, Benedite Osternaud, Nicolas Daval, Ian Cayrefourcq, C. Lagahe, B. Bataillou, C. Aulentte, C. Morales, N. Sousbie, S. Sartori, Carlos Mazure, Franck Fournel, Beatrice Biasse, E. Jalaguier, B. Aspar, J.F. Michaud, C. Richtarch, Bruno Ghyselen, A.M. Cartier, Takeshi Akatsu, S. Pocas, Olivier Rayssac, A. Beaumont, A. Soubie, Hubert Moriceau
Publikováno v:
Journal of Electronic Materials. 32:829-835
The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations can be achieved by this process, because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b45aa41353115a35fb42b8df91ba24
https://doi.org/10.1007/s11664-003-0196-x
https://doi.org/10.1007/s11664-003-0196-x
Autor:
A. Saboundji, J.F. Michaud, T. Mohammed-Brahim, F. Le Bihan, G. Andrä, J. Bergmann, Fritz Falk
Publikováno v:
Solid State Phenomena. 93:55-60
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b383377bbd3bf860546b92d475800314
https://doi.org/10.4028/www.scientific.net/ssp.93.55
https://doi.org/10.4028/www.scientific.net/ssp.93.55
Autor:
C. Pudda, F. Gusella, Beatrice Biasse, C. Jaussaud, J. Margail, J.F. Michaud, A. Soubie, J. M. Lamure
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:826-830
Based on the results of five years of research on the SIMOX process, a complete facility for production of SIMOX wafers on a semi-industrial basis has been set up at LETI. This facility which is located in a class-100 clean room comprises an BATON NV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6e7a62bc6562d1d1a3471f9f8ea6ab
https://doi.org/10.1016/0168-583x(91)96287-u
https://doi.org/10.1016/0168-583x(91)96287-u
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
We describe a new technique which allows a large dimension III-V thin film to be transferred on a full silicon wafer. The potential applications of this technology to InP are: spatial solar cells and integration of optic functions on silicon. This or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4d3cb945b9a0a0afe9346a988342c5
https://doi.org/10.1109/iciprm.1999.773773
https://doi.org/10.1109/iciprm.1999.773773
Autor:
B. Biasse, A.M. Cartier, A.M. Papon, F. Gusella, J.F. Michaud, J. Margail, C. Jaussaud, C. Pudda, J.M. Lamure, A. Soubie
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
A 150 m/sup 2/ class 100 clean room, specially dedicated for separation by implantation of oxygen (SIMOX) wafer production on a semi-industrial basis, has been set up at LETI. This facility includes a very high current oxygen ion implantation machine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da7dc4320d9e96dfc8b5f58b7d46adb8
https://doi.org/10.1109/sossoi.1990.145702
https://doi.org/10.1109/sossoi.1990.145702
Akademický článek
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Autor:
B. Aspar, C. Locatelli, S. Pocas, J.F. Michaud, M. Bruel, A. Mas, E. Jalaguier, O. Rayssac, A.M. Papon, H. Moriceau
Publikováno v:
Electronics Letters. 35:1024
The ability to obtain thin films using the Smart-Cut(R) process combined with metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic layers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c197eea8703e53185b1ef78847203f3c
https://doi.org/10.1049/el:19990663
https://doi.org/10.1049/el:19990663
Publikováno v:
Electronics Letters. 34:408
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8a63018db996c56a213151e9a368d1
https://doi.org/10.1049/el:19980265
https://doi.org/10.1049/el:19980265
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Publikováno v:
MRS Proceedings. 45
Outgassing of HUNT HPR 204 photoresist during ion implantation has been characterized by means of quadrupole mass analysis. The influence of the various parameters (implantation eneray, beam current, ion species) has been studied in order to point ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3d287f04f3ce8fa0656300f0261077
https://doi.org/10.1557/proc-45-203
https://doi.org/10.1557/proc-45-203