Zobrazeno 1 - 10
of 24
pro vyhledávání: '"J.F. Guillaumond"'
Autor:
C. Guedj, J.F. Guillaumond, Lucile Arnaud, Gilles Reimbold, Joaquin Torres, M. Aimadeddine, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 82:374-379
We present the impact of the sidewall diffusion barrier on the dielectric properties of advanced Cu/porous ULK interconnects. From the temperature dependence of the leakage currents, the conduction mechanisms can be compared. The high field transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40dd7b90885bc12551e3dc667d3ffebf
https://doi.org/10.1016/j.mee.2005.07.019
https://doi.org/10.1016/j.mee.2005.07.019
Autor:
Gérard Passemard, G. Reimbold, Lucile Arnaud, Jean-Paul Barnes, C. Guedj, Sylvain Maitrejean, A. Roule, F. Mondon, J.F. Guillaumond, X. Portier, Vincent Jousseaume, L.L. Chapelon, Vincent Arnal, Joaquim Torres
Publikováno v:
Microelectronic Engineering. 80:345-348
The dielectric properties of porous ULK/Cu interconnects designed for sub 65nm nodes are degraded at high bias-stress. The resulting increase of dielectric constant and defect density can be estimated from the Poole-Frenkel modeling of the leakage cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d51dea41035b8226655dce45dac336
https://doi.org/10.1016/j.mee.2005.04.089
https://doi.org/10.1016/j.mee.2005.04.089
Autor:
J.F. Guillaumond, Lucile Arnaud, Vincent Arnal, Roland Pantel, Joaquim Torres, P. Dumont-Girard, S. Chhun, L.G. Gosset, N. Casanova, X. Federspiel
Publikováno v:
Microelectronic Engineering. 76:106-112
Self-aligned barriers on copper are widely investigated as a promising solution to replace standard PECVD dielectric barriers for the 65 nm technology node and beyond. As an alternative to electroless or selective CVD deposition, CuSiN barriers, base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::698a66868d69ebd4a0bad544cdea86d5
https://doi.org/10.1016/j.mee.2004.07.022
https://doi.org/10.1016/j.mee.2004.07.022
Autor:
Vincent Jousseaume, L.L. Chapelon, A. Toffoli, Lucile Arnaud, Joaquim Torres, Gilles Reimbold, Gérard Passemard, J.F. Guillaumond, Sylvain Maitrejean, A. Roule, J.P. Barnes, Vincent Arnal, C. Guedj
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
With the scaling down of copper interconnects, the importance of interface engineering becomes more and more crucial. In this paper, we have studied the influence of the diffusion barriers on the electrical performance and dielectric reliability of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465bad6f156d804b6287c477a142d8a8
https://doi.org/10.1109/iitc.2005.1499922
https://doi.org/10.1109/iitc.2005.1499922
Autor:
J. Michelon, Romano Hoofman, Vincent Arnal, O. Hinsinger, Aurelie Humbert, J.F. Guillaumond, Laurent-Georges Gosset, C. Guedj, L. Michaelson, Cindy K. Goldberg, Gérard Passemard, Greja Johanna Adriana Maria Verheijden, Joaquim Torres, W Besling, Dirk J. Gravesteijn, Pascal Bancken, Lucile Arnaud, Roel Daamen, Vincent Jousseaume, Robert Fox
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
The continuous downscaling of interconnect dimensions in combination with the introduction of porous low-k materials has increased the number of integration challenges tremendously. The paper focuses mainly on the impact of porous low-k dielectrics o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a009df83f9b2867efbba7086d32041e
https://doi.org/10.1109/iitc.2005.1499934
https://doi.org/10.1109/iitc.2005.1499934
Autor:
J.F. Guillaumond, Vincent Arnal, Joaquim Torres, F. Mondon, C. Guedj, G. Reimbold, Lucile Arnaud
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
We show that the leakage currents of Cu/low-k advanced interconnects are sensitive to light. This effect depends on temperature, materials and aging: therefore it is a tool for assessing the reliability of these integrated devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed1170e715ec2fd711cfbb5fdc5d596e
https://doi.org/10.1109/relphy.2005.1493154
https://doi.org/10.1109/relphy.2005.1493154
Autor:
Lucile Arnaud, W Besling, M. Dupeux, G. Reimbold, J.F. Guillaumond, C. Guedj, Joaquim Torres, Vincent Arnal
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
We studied the impact on electromigration (EM) of new materials and processes developed for nodes of 45 nm and below. Metal barrier (liner) thickness and its deposition process with ultra low k (ULK) porous dielectric have been intensively investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::067a8192e3c5cb4f7d08b4ce8c700e1f
https://doi.org/10.1109/relphy.2005.1493192
https://doi.org/10.1109/relphy.2005.1493192
Autor:
Gilles Reimbold, M. Fayolle, C. Guedj, Vincent Jousseaume, D. Bouchu, J.F. Guillaumond, A. Toffoli, Lucile Arnaud, J. Cluzel
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
The combination of porous ultra low k dielectric and copper metallization is an attractive alternative to meet the requirements of ITRS roadmap concerning the 65 nm interconnection technology, but very little is known about the reliability of such an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::307020ebf8d5edab7e3ac1bc1fa531d7
https://doi.org/10.1109/iitc.2004.1345722
https://doi.org/10.1109/iitc.2004.1345722
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
The characterisation of the damascene copper line resistivity as a function of linewidth and temperature were carried out for sub 100 nm feature size and down to 4.2 K. Mayadas model for grain boundary and sidewall scattering was used to analyse expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1d782cbc2b9c6eea2efaf155fe6985
https://doi.org/10.1109/iitc.2003.1219733
https://doi.org/10.1109/iitc.2003.1219733
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
Electromigration studies showed that an activation energy Ea/spl sim/0.9 eV was obtained in Cu interconnects with SiOC as lateral dielectric for linewidths down to 0.28 /spl mu/m. Failure analysis showed similar EM diffusion path in Cu/SiOC interconn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a932a971b3b48378dc0212628a53c8c
https://doi.org/10.1109/iitc.2003.1219703
https://doi.org/10.1109/iitc.2003.1219703