Zobrazeno 1 - 10
of 56
pro vyhledávání: '"J.F. Donlon"'
Publikováno v:
IEEE Transactions on Industry Applications. 38:168-174
Insulated gate bipolar transistors (IGBTs) based on the non-punch-through (NPT) design approach exhibit excellent safe operating area (SOA) and short-circuit endurance, a positive temperature coefficient of on-state voltage over the operating current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d346377d21752c7cc905e3aac8be4fb
https://doi.org/10.1109/28.980372
https://doi.org/10.1109/28.980372
Publikováno v:
IEEE Transactions on Industry Applications. 37:896-903
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd99078a8671d2cfabd35c3bb3287797
https://doi.org/10.1109/28.924773
https://doi.org/10.1109/28.924773
Publikováno v:
2013 IEEE Energy Conversion Congress and Exposition.
A resistance-capacitance $(RC) $ thermal network with temperature-dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of insulated-gate bipolar-transistor modules using a device model realized in Simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cf593528fdb7bdd0c62c099f962e135
https://doi.org/10.1109/ecce.2013.6646980
https://doi.org/10.1109/ecce.2013.6646980
Publikováno v:
IEEE Transactions on Industry Applications. 27:507-514
The authors discuss the turn-on and turn-off losses in a gate turn-off (GTO) thyristor which must be properly accounted for because they can comprise upwards of 60% of the total losses. The authors attempt to discuss and clarify the definitions of po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b9fa3482378338676ae8a649e2a1dc
https://doi.org/10.1109/28.81835
https://doi.org/10.1109/28.81835
Publikováno v:
IAS
Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad77f578a39ec48b242d23f07953a285
https://doi.org/10.1109/08ias.2008.368
https://doi.org/10.1109/08ias.2008.368
Publikováno v:
IAS
High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af82c7eb6e9f3ea7d680f8a893eefa9
https://doi.org/10.1109/07ias.2007.117
https://doi.org/10.1109/07ias.2007.117
Publikováno v:
2007 European Conference on Power Electronics and Applications.
High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef06b0f3c07c64759c7dfa384b48efb
https://doi.org/10.1109/epe.2007.4417346
https://doi.org/10.1109/epe.2007.4417346
Publikováno v:
Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting.
Intelligent power modules (IPMs) in the 600V class have been successfully applied to a variety of industrial and consumer applications for upwards of ten years. Transfer mold manufacturing technology was adopted about eight years ago to reduce cost a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b859145f093fcef6fec4c9d3cd6c0d57
https://doi.org/10.1109/ias.2006.256612
https://doi.org/10.1109/ias.2006.256612
Autor:
E.R. Motto, J.F. Donlon
Publikováno v:
Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06..
This paper describes a new family of intelligent power modules utilizing a novel gate driver that automatically adjusts its driving speed as a function of collector current to provide an improved trade-off between switching losses and switching noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c6c02403ca0e704e00526c7688c8146
https://doi.org/10.1109/apec.2006.1620768
https://doi.org/10.1109/apec.2006.1620768
Publikováno v:
Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting..
This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ef231be2c9d9f61de23a97373f242c
https://doi.org/10.1109/ias.2004.1348675
https://doi.org/10.1109/ias.2004.1348675