Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J.E. Sedgewick"'
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
This paper describes an evaluation the charge control characteristics of an inline plasma cell installed at the end of the beamline on an Eaton NV-GSD/ULE2 (ULE) ultra-low energy ion implanter. The charge test vehicles used included Sematech Process-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b404bf7ee5cd25ba73f440c9b5e0512c
https://doi.org/10.1109/iit.1999.812166
https://doi.org/10.1109/iit.1999.812166
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
The process performance of a high current ultra low energy machine over a wide range of energies (200 eV to 30 keV) and high beam currents is characterized. Designed to meet the production needs of 0.18 /spl mu/m ultra shallow junction implants, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd86dbfbadc9029315bfc4b53c66447f
https://doi.org/10.1109/iit.1999.812192
https://doi.org/10.1109/iit.1999.812192
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Statistical Process Control has had increasing popularity in the manufacturing environment in recent years. SPC is the process of collecting information that is indicative of the health of the equipment and or process. Analysis of the data can determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d01f5cf67fd46a2298924aa286d0e75
https://doi.org/10.1109/iit.1996.586413
https://doi.org/10.1109/iit.1996.586413
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Silicon monitor wafers are typically used to evaluate the cleanliness of an ion implanter in a production environment. Surface detection methods count particles on these wafers prior to processing. The same surface detection methods are used after im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916d2efb0ab053c718e2eb13d587bebb
https://doi.org/10.1109/iit.1996.586168
https://doi.org/10.1109/iit.1996.586168
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.