Zobrazeno 1 - 10
of 33
pro vyhledávání: '"J.E. Pogemiller"'
Publikováno v:
Journal of Micromechanics and Microengineering. 4:106-109
Single tip and arrays of n-type, (100) monocrystalline silicon field emitters were fabricated with a dual-gate structure. The field at the tip can be expressed as E= beta (Vgl+Vgr), in which Vgl and Vgr are the left and right gate voltages. By applyi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7a4ed80b1b8d37323d1a137f1c30e7
https://doi.org/10.1088/0960-1317/4/3/002
https://doi.org/10.1088/0960-1317/4/3/002
Publikováno v:
Journal of Micromechanics and Microengineering. 4:55-59
An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83ec0224cfa13b36ea551e30faaa620
https://doi.org/10.1088/0960-1317/4/2/002
https://doi.org/10.1088/0960-1317/4/2/002
Publikováno v:
Journal of Micromechanics and Microengineering. 4:60-66
Current fluctuations of a gated, n-type, (100) silicon field emitter were recorded from initial emission, through the forming process, and then cycled between low ( approximately 0.4 mu A) and high ( approximately 10 mu A) currents. After the first e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5780edb5113f1d0136d10e84684b81e4
https://doi.org/10.1088/0960-1317/4/2/003
https://doi.org/10.1088/0960-1317/4/2/003
Publikováno v:
Journal of Micromechanics and Microengineering. 3:49-56
By operating the field emitter triode in the collector-assisted field emission mode, a strong dependency of the collector current as a function of emitter-to-collector distance is obtained. This property can be used in the construction of displacemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffafc2cacb755c5389cbe77a1a0b0596
https://doi.org/10.1088/0960-1317/3/2/003
https://doi.org/10.1088/0960-1317/3/2/003
Publikováno v:
IEEE Transactions on Electron Devices. 40:1537-1542
The field at the tip of a field emitter triode can be expressed by E= beta V/sub g/+/sub gamma /V/sub c/, where V/sub g/ and V/sub c/ the gate and collector voltages, respectively. For small gate diameters and tips below or in the plane of the gate a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa702e88a9dd1370b53aebdba35d014
https://doi.org/10.1109/16.223716
https://doi.org/10.1109/16.223716
Publikováno v:
IEEE Transactions on Electron Devices. 40:1530-1536
Arrays of 10*10, 30*30, and 50*50 phosphorus-doped 0.005-0.025 Omega -cm, monocrystalline silicon field emitters have been fabricated with an emitter height of approximately 4.5 mu m, a cone angle of 110 degrees , and four gate openings ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cefaf4b70edfdafaf16d7b448309900
https://doi.org/10.1109/16.223715
https://doi.org/10.1109/16.223715
Publikováno v:
IEEE Transactions on Electron Devices. 39:2616-2620
By positioning the gate below the tip in a vacuum triode, field emission can be initiated by the collector voltage V/sub c/ and the emission current can be modulated by the gate voltage V/sub g/. Principle of operation is demonstrated for a single-ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba45cf52ca66086724f109a062985f55
https://doi.org/10.1109/16.163472
https://doi.org/10.1109/16.163472
Publikováno v:
IEEE Transactions on Electron Devices. 38:2350-2354
A vacuum test station has been designed allowing for rapid evaluation of vacuum microelectronic devices. The system consists of a turbo-pumped vacuum chamber reaching a base pressure, at room temperature, of 3*10/sup -9/ torr. Devices which are fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115be9c4917e83cf02b7e31e0a1a55c5
https://doi.org/10.1109/16.88524
https://doi.org/10.1109/16.88524
Publikováno v:
IEEE Transactions on Electron Devices. 37:1039-1045
To prove the feasibility of implementing artificial neural networks on large inexpensive substrates, a net designed and fabricated on a glass wafer using hydrogenated-amorphous-silicon-based technology (a-Si:H) is discussed. The net functions as an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb720284009e5266ebcd2f42cc3aa31
https://doi.org/10.1109/16.52439
https://doi.org/10.1109/16.52439
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ceeb28d03fe70fa7c906a5df3c46acd
https://doi.org/10.1109/ivmc.1993.700319
https://doi.org/10.1109/ivmc.1993.700319