Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J.E. Mynard"'
Autor:
A. Cansell, P.L.F. Hemment, Chris Jeynes, R.J. Wilson, D.J.W. Mous, M. Ma, B.J. Sealy, R. Koudijs, K.G. Stephens, J.E. Mynard, M.D. Browton
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:27-31
A high energy heavy ion implantation system is described which is based upon a 2 MV High Voltage Engineering Europa Van de Graaff accelerator, which incorporates an ion source rapid exchange mechanism. The design and performance are described with pa
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:335-338
A cold-cathode lateral-extraction ion source has been developed. This source has two hollow cathodes made of either graphite or titanium, which allows an increase in the arc current and a reduction in both the arc voltage and the discharge pressure.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 300:10-14
This paper presents an extraction system with a long channel slit-formed extraction electrode and gives a theoretical calculation, from basic formulae, of the geometric parameters for the extraction system. Some numerical results from these formulae
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 288:303-307
This paper gives a theoretical calculation, from basic formulae, of the geometric parameters for the extraction system of an rf ion source. Some numerical results from these formulae compared favourably with experimental data, indicating that the the
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
There has been a great deal of interest in the Indium Gallium Arsenide (InGaAs) material system, both lattice matched to Indium Phosphide (InP) as well as material grown pseudomorphically on GaAs because of its importance to optoelectronic devices. I
Publikováno v:
Review of Scientific Instruments. 63:2475-2477
An improved Penning ion source has been developed. This ion source has two helical filaments at the two ends of the discharge chamber. The design of the filaments is such that the resultant magnetic field distribution, which is a combination of the e
Autor:
P.L.F. Hemment, B.J. Sealy, K.G. Stephens, J.E. Mynard, C. Jeynes, M.D. Browton, R.J. Wilson, M.X. Ma, A. Cansell, D.J.W. Mous, R. Koudijs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e6ce2ca7e54d4718bba9fbb1674235
https://doi.org/10.1016/b978-0-444-89994-1.50010-7
https://doi.org/10.1016/b978-0-444-89994-1.50010-7
Autor:
R.F. Peart, J.E. Mynard, C. Knowler, M.F. Yao, E. Pasztor, C. J. Richmond, P.L.F. Hemment, K.G. Stephens
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 6:100-105
The 400 keV research implanter at the University of Surrey has been designed, primarily, for the implantation of high doses of ions into samples of various size and geometry. This goal has been achieved by the use of the Freeman type source, a cylind
Publikováno v:
Scopus-Elsevier
Carrier concentration and mobility profiles as a function of annealing time and temperature are reported for megaelectronvolt silicon implants into GaAs. Atomic profiles show the implant profile shape to be of the Pearson IV type. The results obtaine
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 277:279-285
A hot cathode Penning ion source, based on a Nielson source in use on the Surrey 500 keV implanter, has been developed. The improvements are in the structure of the discharge chamber and the design of the magnetic fields produced by the coil and fila