Zobrazeno 1 - 10
of 36
pro vyhledávání: '"J.E. Leiss"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 17:337-344
The TI dRAM cell, a MOSFET with two dynamically programmable threshold states, is very attractive for VLSI dRAM's because of its potential 3X density advantage over the one-transistor and -capacitor (1-T) cell, 10X lower leakage at high temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::559c9264498aa7190434b24d65e1266a
https://doi.org/10.1109/jssc.1982.1051738
https://doi.org/10.1109/jssc.1982.1051738
Autor:
J.E. Leiss, R.A. Schrack
Publikováno v:
Reviews of Modern Physics. 30:456-461
An experiment was performed to determine nuclear radii from the coherent neutral meson production. Since the pi /sup 0/ production from neutrons and protons is essentially the same, what is measured is the distribution of nuclear matter as distinct f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1ae6e9f7acaa1b876aa104e2d6a8eb
https://doi.org/10.1103/revmodphys.30.456
https://doi.org/10.1103/revmodphys.30.456
Autor:
J.E. Leiss, S. Penner
Publikováno v:
Physical Review. 114:1101-1109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b768760575fcc67ef84ffb9f0eb86f
https://doi.org/10.1103/physrev.114.1101
https://doi.org/10.1103/physrev.114.1101
Publikováno v:
Physical Review. 107:1544-1548
Approximate range straggling curves for the slowing down of high-energy electrons in carbon have been calculated by a Monte Carlo technique using the University of Illinois digital computer. The effects of ionization straggling, radiation, and multip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac683f9bafe1cadc14ecf09cb81a8a93
https://doi.org/10.1103/physrev.107.1544
https://doi.org/10.1103/physrev.107.1544
Autor:
R.A. Schrack, J.E. Leiss
Publikováno v:
Physical Review. 109:1326-1328
A search has been made for an asymmetry in the decay photons from photoproduced neutral pions around the direction of motion of thc pions. No asymmetry was found. This indicatcs that if the pions should have nonzero spin, they are not polarized or al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fee48456a7931f3ca7b65c471c059e9
https://doi.org/10.1103/physrev.109.1326
https://doi.org/10.1103/physrev.109.1326
Autor:
Pallab K. Chatterjee, J.E. Leiss
Publikováno v:
1980 International Electron Devices Meeting.
An analytic-predictor model which describes phenomena observed in small geometry MOSFETs is presented. I-V characteristics from subthreshold through saturation are predicted within the bounds of process parameter variations using only physical and st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38761ddcd01a99fe3122303cbc965bc7
https://doi.org/10.1109/iedm.1980.189744
https://doi.org/10.1109/iedm.1980.189744
Autor:
Louis C. Parrillo, J.E. Leiss, V.W. Soorholtz, R.W. Mauntel, Norm Herr, R.I. Kung, M.D. Bader, S.J. Cosentino, S.K. Madan, K.L. Wang, Horacio Mendez
Publikováno v:
1986 International Electron Devices Meeting.
A selectively pumped p-well SRAM cell technology is discussed. This technology allows the optimization of circuit speed while reducing the array leakage. In addition, a pumped p-well cell technology improves cell stability, reduces bit line capacitan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0769f6ae2b74d7edfc7eab8ee83d86
https://doi.org/10.1109/iedm.1986.191260
https://doi.org/10.1109/iedm.1986.191260
Autor:
T.D. Bonifield, Satwinder Malhi, D.E. Carter, D.J. Coleman, Pallab K. Chatterjee, R.F. Pinizzotto, J.E. Leiss
Publikováno v:
IEEE Electron Device Letters. 5:428-429
A novel device structure for self-aligning the overlaid device in a stacked CMOS process is introduced and demonstrated. The structure allows submicrometer channel length devices to be fabricated without using advanced lithographic technology. The se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::070eee723ecd4d2cac9cff0474f590f1
https://doi.org/10.1109/edl.1984.25973
https://doi.org/10.1109/edl.1984.25973
Publikováno v:
Physical Review. 98:201-202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ecc0d2f8741541991e4a9807a98051
https://doi.org/10.1103/physrev.98.201.2
https://doi.org/10.1103/physrev.98.201.2
Autor:
J.E. Leiss, P.K. Chatterjee
Publikováno v:
IEEE Transactions on Electron Devices. 29:1694-1694
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f376f34d781724046986eafb53f7603
https://doi.org/10.1109/t-ed.1982.20987
https://doi.org/10.1109/t-ed.1982.20987