Zobrazeno 1 - 10
of 53
pro vyhledávání: '"J.E. Fouquet"'
Autor:
Dinesh Patel, K. Interholzinger, P. Thiagarajan, J.E. Fouquet, Carmen S. Menoni, G. Y. Robinson
Publikováno v:
IEEE Journal of Quantum Electronics. 34:93-100
The effect of strain on the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells (MQW's) has been investigated from high-pressure and low-temperature photoluminescence measurements. The biaxial strain in the wells wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57226f330216c6ae56a954fe29763591
https://doi.org/10.1109/3.655012
https://doi.org/10.1109/3.655012
Publikováno v:
IEEE Journal of Quantum Electronics. 32:1777-1781
The output power of an external-cavity-tuned laser has been significantly increased by using an output coupler with a wavelength-dependent reflectivity. Our algorithm for determining the optimum wavelength dependence uses a simple gain model, and all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0206394cec6b3c5537d884c9f2ad182
https://doi.org/10.1109/3.538784
https://doi.org/10.1109/3.538784
High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry
Publikováno v:
IEEE Journal of Quantum Electronics. 31:1494-1503
A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit sep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68f55aa3f95f27862ea155cc82ea207
https://doi.org/10.1109/3.400402
https://doi.org/10.1109/3.400402
Autor:
R. Hiskes, Roger K. Route, Robert S. Feigelson, S.A. DiCarolis, Z. Lu, J.E. Fouquet, F. Leplingard
Publikováno v:
Journal of Materials Research. 9:2258-2263
C-axis LiNbO3 epitaxial films have been grown on c-plane sapphire substrates by solid source metal-organic chemical vapor deposition (MOCVD) using the tetramethylheptanedionate sources, Li(thd) and Nb(thd)4. Stoichiometric LiNbO3 films were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e4a7a82a00248931eee88ff0b2a4bb9
https://doi.org/10.1557/jmr.1994.2258
https://doi.org/10.1557/jmr.1994.2258
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e7acaf55b9f7889cbedf80c72da54d
https://doi.org/10.1109/leos.1992.693867
https://doi.org/10.1109/leos.1992.693867
Autor:
J.E. Fouquet
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
Summary form only given, as follows. Photonic switch arrays utilizing waveguide devices address numerouswavelength division multiplexing applications. They possess scveral advantages, including small size, permanent optical alignment, insensitivity t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23957e41bbe1b48b46f9eb9dfb8a1c33
https://doi.org/10.1109/ofc.2002.1036575
https://doi.org/10.1109/ofc.2002.1036575
Publikováno v:
Proceedings of LEOS '93.
This paper describes novel semiconductor sources for optical low coherence reflectometry (OLCR), a measurement technique for characterizing device and fiber reflections with high sensitivity and high spatial resolution. Lasers and conventional superl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26123f14cdfce932d79627ec819add63
https://doi.org/10.1109/leos.1993.379348
https://doi.org/10.1109/leos.1993.379348
Autor:
J.E. Fouquet
Publikováno v:
Optical Fiber Communication Conference. Technical Digest Postconference Edition. Trends in Optics and Photonics Vol.37 (IEEE Cat. No. 00CH37079).
Optical cross-connect switch matrices have demonstrated transmission losses of 0.07 dB per crosspoint, crosstalk of /spl sim/70 dB per crosspoint and switching times of 1 msec. We now have the technology to produce 32/spl times/32-size matrices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5713a1493237edd3ea9c557423e7b931
https://doi.org/10.1109/ofc.2000.868416
https://doi.org/10.1109/ofc.2000.868416
Publikováno v:
Applied Physics Letters. 63:3212-3214
Photoluminescence excitation spectroscopy at 9 K reveals that the absorption edge of Ga0.5In0.5P containing relatively ordered domains (grown at 670 °C) is near 1.93 eV, representing the band gap of this inhomogeneous material. Photoluminescence (PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee340a7f56ae2c267631a704f3872695
https://doi.org/10.1063/1.110201
https://doi.org/10.1063/1.110201
Publikováno v:
Applied Physics Letters. 57:1566-1568
Ga0.5In0.5P grown lattice matched to GaAs by metalorganic chemical vapor deposition (MOCVD) exhibited domains of varying degrees of column III sublattice ordering. Continuous‐wave photoluminescence spectra were single peaked and relatively narrow,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35b3e0d2fc4c4ff957787cf922a9f914
https://doi.org/10.1063/1.103355
https://doi.org/10.1063/1.103355