Zobrazeno 1 - 10
of 42
pro vyhledávání: '"J.D. Luttmer"'
Autor:
Gregory B. Shinn, Christopher L. Borst, Vincent Korthuis, William N. Gill, Ronald J. Gutmann, J.D. Luttmer
Publikováno v:
Thin Solid Films. 385:281-292
The effects of slurry chemistry and film properties on the chemical–mechanical polishing (CMP) of three organosilicate glasses (SiOC) were used to develop an understanding of the removal mechanism during SiOC CMP. The SiOC removal rate varied from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d18c796eb7f3c42cded4ad4d3ce253f
https://doi.org/10.1016/s0040-6090(00)01925-8
https://doi.org/10.1016/s0040-6090(00)01925-8
Publikováno v:
Applied Surface Science. 126:43-56
The surface of vapor deposited parylene AF-4 [poly( α , α , α ′, α ′-tetrafluoro- p -xylylene)] was characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Subsequent interactions with trimethylaluminum (TMA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd17e1358acd1451b6ead78eeff8f2d1
https://doi.org/10.1016/s0169-4332(97)00585-0
https://doi.org/10.1016/s0169-4332(97)00585-0
Autor:
G.A. Dixit, W.Y. Hsu, A.J. Konecni, S. Krishnan, J.D. Luttmer, R.H. Havemann, J. Forster, G.D. Yao, M. Narasimhan, Z. Xu, S. Ramaswami, F.S. Dhen, J. Nulman
Publikováno v:
International Electron Devices Meeting. Technical Digest.
An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a249f715520b3145a1248fd1209b4c66
https://doi.org/10.1109/iedm.1996.553602
https://doi.org/10.1109/iedm.1996.553602
Autor:
Amitava Chatterjee, Ih-Chin Chen, J.D. Luttmer, Iqbal Ali, S. Aur, Kelly J. Taylor, Sean C. O'Brien, Somnath S. Nag
Publikováno v:
International Electron Devices Meeting. Technical Digest.
The dielectric material used to fill trenches in Shallow Trench Isolation (STI) of transistors, is key to device performance. This paper (a) evaluates the integration of currently available dielectric technologies and (b) designs an optimized process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7bdf38c87466f83a4ac4020f052011
https://doi.org/10.1109/iedm.1996.554111
https://doi.org/10.1109/iedm.1996.554111
Autor:
J.D. Luttmer, Richard A. Chapman, B. Brennan, E. Zielinski, D. Carter, M. Hanratty, Abha Singh, Q. He, Wei William Lee, Amitava Chatterjee, Guoqiang Xing, B. Havermann, Girish A. Dixit, Sunny Fang, D. Rogers
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
We have developed different Si/sub x/O/sub y/N/sub z/ antireflective coating (ARC) films for many different substrates for deep-UV lithography and implemented then into sub-0.18 /spl mu/m logic and Gigabit DRAM frontend and backend processes. The Si/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc9d093207da31f0698329d207b6a47
https://doi.org/10.1109/vlsit.1998.689210
https://doi.org/10.1109/vlsit.1998.689210
Autor:
Ih-Chin Chen, Richard A. Chapman, P.J. Chen, Sunil V. Hattangady, H.-L. Tsai, Jiong-Ping Lu, L.K. Magel, George A. Brown, Antonio L. P. Rotondaro, J.C. Hu, H. Yang, J.D. Luttmer, B. Amirhekmat, Robert Kraft
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
CVD W/CVD TiN stacks are studied for the first time as gate electrodes on 3 nm gate oxide and compared with the CVD W/PVD (sputtering) TiN gate stacks and the baseline n/sup +/ poly gate. It is found that the PVD TiN has higher metal-to-SiO/sub 2/ ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2353e97d0eb39a38bbc1a2ea208ce47c
https://doi.org/10.1109/iedm.1997.650423
https://doi.org/10.1109/iedm.1997.650423
Autor:
Aaron Frank, J.D. Luttmer, Ming-Hsing Tsai, V. Parihar, Matt Nowell, R. A. Augur, Qing-Tang Jiang, R.H. Havemann
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
The effect of different post electroplating anneals on dual damascene Cu microstructures and via chain yields using both rapid thermal processing and furnace anneal were investigated. It was found the grain size, [111] texture and Cu line resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac14bc6999405fe0147fac8437eb850c
https://doi.org/10.1109/icsict.2001.981504
https://doi.org/10.1109/icsict.2001.981504
Autor:
J.D. Luttmer, B. van Schravendijk, Kelly J. Taylor, J.S. Martin, C.T. Adams, A. Bayman, T.D. Bonifield, Jeff West, A.K.R. Ralston, E.M. Mickler, K.-H. Chew, S. Bolnedi
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
We report process characterization for a fluorosilicate glass (FSG), developed specifically for copper/damascene, where both the via and the line are embedded in FSG (K/spl les/3.65) at 6 levels. We compare FSG films deposited in both high density pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf79ab972a8fd97c457359b505996d50
https://doi.org/10.1109/iitc.2001.930010
https://doi.org/10.1109/iitc.2001.930010
Akademický článek
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Akademický článek
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