Zobrazeno 1 - 10
of 34
pro vyhledávání: '"J.C. Thuillier"'
Autor:
J. Bouat, J.C. Thuillier
Publikováno v:
Journal de Physique. 39:1193-1197
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c729d1a766e29c1c1de66c3ad659ba
https://doi.org/10.1051/jphys:0197800390110119300
https://doi.org/10.1051/jphys:0197800390110119300
Publikováno v:
Surface Science. 78:104-114
A LEED study of the (1210) face of selenium shows a restructuration by a facetting process occurring along cleavage faces. This behaviour is compared with that of (1210) faces of tellurium. The behavioural difference is related to the covalent nature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0002e7d90dbb6652a4265f9603f498bf
https://doi.org/10.1016/0039-6028(78)90213-3
https://doi.org/10.1016/0039-6028(78)90213-3
Publikováno v:
Surface Science. 59:218-224
A study of the (1210) face of tellurium by low energy electron diffraction and Auger electron spectroscopy enables us to exhibit two types of structure. An anomaly recorded during epitaxial growths of selenium on that face is linked to this differenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f06bc4c353ac9cf406e78c247d3b220
https://doi.org/10.1016/0039-6028(76)90302-2
https://doi.org/10.1016/0039-6028(76)90302-2
Autor:
J.C. Thuillier, J. Bouat
Publikováno v:
Surface Science. 73:528-536
We report the study of the inversion layer induced in the planes [0001] and [1100] of tellurium by quantum galvanomagnetic measurements. Quantization induces one subband which splits in two levels according to the special configuration of the conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73de4f69386e2ff7297c12915d39e410
https://doi.org/10.1016/0039-6028(78)90536-8
https://doi.org/10.1016/0039-6028(78)90536-8
Autor:
J. Bouat, J.C. Thuillier
Publikováno v:
Physics Letters A. 62:523-525
We report results and the analysis of properties of the two-dimensional inversion layer in the [0001] plane at the surface of tellurium, showing special features associated with the dispersion relation of the conduction band of tellurium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbfbfed1250937692b9583785234323
https://doi.org/10.1016/0375-9601(77)90090-1
https://doi.org/10.1016/0375-9601(77)90090-1
Publikováno v:
1973 Ultrasonics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c511a74b5e0bbf1db61bcf856976b6b3
https://doi.org/10.1109/ultsym.1973.196224
https://doi.org/10.1109/ultsym.1973.196224
Publikováno v:
1974 Ultrasonics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::657184d09a58ca9e056b690ce99c9479
https://doi.org/10.1109/ultsym.1974.196343
https://doi.org/10.1109/ultsym.1974.196343
Publikováno v:
Physics Letters A. 56:331-332
Using the gain-bandwidth method, the piezoelectric constant d 14 of trigonal selenium has been deduced from measurements of the admittance and the electromechanical resonance frequencies of appropriately cut bars. The value was found to be | d 14 | =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8abbe6bfcf0f4baedb5bd302f0eb26
https://doi.org/10.1016/0375-9601(76)90329-7
https://doi.org/10.1016/0375-9601(76)90329-7
Publikováno v:
Physica B+C. :417-418
The static dielectric constant ϵ of InSb was directly determined from typical capacitance measurements. To carry out these experiments the high resistant n -type InSb material was used. The extremely low carrier concentrations ( n 12 cm −3 ) were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ac7ebf87e64d4f1a2d76dd8376bf1f
https://doi.org/10.1016/0378-4363(86)90612-1
https://doi.org/10.1016/0378-4363(86)90612-1
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