Zobrazeno 1 - 10
of 55
pro vyhledávání: '"J.C. Pickel"'
Autor:
Robert A. Reed, Ronald D. Schrimpf, Raymond L. Ladbury, Paul W. Marshall, Elizabeth Polidan, J.C. Pickel, Augustyn Waczynski, Robert A. Weller, Robert E. McMurray, M. McKelvey, Marcus H. Mendenhall, Scott D. Johnson, T.M. Jordan, Kim Ennico, C. McCreight, B. Fodness, G. Gee
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2657-2663
We present measurements of proton-induced single event transients in ultra-low noise HgCdTe IR detector arrays being developed for space-based astronomy and compare to modeling results.
Autor:
Robert A. Reed, G. Gee, J.C. Pickel, B. Fodness, Robert E. McMurray, M. McKelvey, Roy R. Johnson, Paul W. Marshall, T.M. Jordan, C. McCreight, K.A. Ennico
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1954-1959
We present measurements of the proton-induced secondary particle environment in the vicinity of an infrared focal plane array. Measurements were made of the energy depositions from secondary electrons and scattered protons from the interior of a cryo
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2219-2224
Results are presented on technique using displacement damage from energetic ions to suppress single event latchup in commercial off-the-shelf (COTS) CMOS integrated circuits. Ions implanted through the back of a thinned chip degrade the parasitic bip
Autor:
John E. Hubbs, Douglas C. Arrington, J.C. Pickel, Paul W. Marshall, R.A. Ramos, Cheryl J. Marshall, G. Gee, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1968-1973
We compare measurements and modeling of 27 and 63 MeV proton-induced transients in a large-format HgCdTe long wavelength infrared (LWIR) focal plane assembly operating at 40 K. Charge collection measurements describe very limited diffusion of carrier
Autor:
Robert A. Reed, J.C. Pickel, Guofu Niu, Ken LaBel, K. Fritz, M.A. Carts, B. Fodness, G. Vizkelethy, Paul E. Dodd, R. Krithivasan, Paul W. Marshall, T.L. Irwin, P.A. Riggs, John D. Cressler, Barry K. Gilbert, J.F. Prairie, B.A. Randall
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2184-2190
Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms re
Publikováno v:
IEEE Transactions on Nuclear Science. 50:671-688
Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of
Autor:
Robert A. Reed, Donald F. Figer, Paul W. Marshall, G. Gee, Raymond L. Ladbury, Louis E. Bergeron, T.M. Jordan, B. Fodness, S.D. Kniffin, J.C. Pickel, Bernard J. Rauscher
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2765-2770
Dark frames from orbiting infrared detector arrays are analyzed using a charge-collection model to investigate the effects of secondary and primary particle environments in infrared detectors and related electronics. The effects of different componen
Autor:
Bernard J. Rauscher, T.M. Jordan, J.C. Pickel, G. Gee, Raymond L. Ladbury, Robert A. Reed, Paul W. Marshall, B. Fodness
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2822-2829
A modeling approach is described for predicting charge collection in space-based infrared detector arrays due to ionizing particle radiation. The modeling uses a combination of analytical and Monte Carlo techniques to capture the essential features o
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2136-2139
We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experiment
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1865-1871
The effects of substrate and epitaxial-layer thickness on the single-event upset and single-event latchup response of integrated circuits are studied using experiments and three-dimensional device simulations. Reducing substrate thickness can be an e