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Publikováno v:
IEEE Transactions on Electron Devices. 22:701-706
An ac or dc GaP LED array has been designed and fabricated which has potential as a direct replacement for several tungsten filament lamps and as an illuminator for new design considerations. In designing such an LED for high-voltage application, ser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7070a6a0edceaaca3160701ad15b639e
https://doi.org/10.1109/t-ed.1975.18206
https://doi.org/10.1109/t-ed.1975.18206
Publikováno v:
IEEE Transactions on Electron Devices. 25:809-812
Phosphorus-doped SiO 2 is frequently used as a dielectric coating in silicon integrated circuits. It is important that windows in this dielectric have sufficiently tapered walls so that the subsequent metallization has good step coverage. It is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1327b03542c9d0948a49434352e4d6
https://doi.org/10.1109/t-ed.1978.19175
https://doi.org/10.1109/t-ed.1978.19175
Autor:
J.C. North
Publikováno v:
Journal of Applied Physics. 48:2419-2423
The interference of incident laser light with light reflected from dielectric interfaces plays an important role in the completeness with which a laser beam vaporizes thin metal films, even though the dielectric layers lie underneath the metal film b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ad1531836c4a1063157cef6694aec5
https://doi.org/10.1063/1.324005
https://doi.org/10.1063/1.324005
Autor:
W.W. Weick, J.C. North
Publikováno v:
IEEE Journal of Solid-State Circuits. 11:500-505
Laser beam coding of high-speed bipolar silicon integrated circuit memories is described. Coding is accomplished by the selective vaporization of Ti-Pt links connecting the contact pads of each memory cell to Ti-Pt-Au bit lines. Vaporized link resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a38c6e1c1160f6f3f444292404f7f56d
https://doi.org/10.1109/jssc.1976.1050766
https://doi.org/10.1109/jssc.1976.1050766
Autor:
R.C. Buschert, J.C. North
Publikováno v:
Journal of Physics and Chemistry of Solids. 27:489-492
When p -type germanium is electron irradiated at liquid nitrogen temperature, a metastable electron trap is formed within the forbidden energy gap. Shifting 5 × 10 17 electrons from the valence band to this metastable level produces very little chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d60fd8dd0411baa213025ae6196e3b4
https://doi.org/10.1016/0022-3697(66)90190-9
https://doi.org/10.1016/0022-3697(66)90190-9
Publikováno v:
Journal of Applied Physics. 44:207-213
The effect of 300‐keV proton bombardment and subsequent annealing on the optical absorption and electrical resistivity of bulk p‐type (p=2×1018 and 1.4×1019 cm−3) GaAs has been studied. Proton doses were in the range 1013−1017 cm−2. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5769f133ed48f35c46c1b88e046e153c
https://doi.org/10.1063/1.1661863
https://doi.org/10.1063/1.1661863
Autor:
J.C. North, R.C. Buschert
Publikováno v:
Physical Review Letters. 13:609-611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e050ba77f082b471fcca587ff4e437a
https://doi.org/10.1103/physrevlett.13.609
https://doi.org/10.1103/physrevlett.13.609