Zobrazeno 1 - 10
of 52
pro vyhledávání: '"J.C. Jacquet"'
Autor:
Eric Chartier, Piero Gamarra, Cedric Lacam, P. Altuntas, D. Lancereau, M. Oualli, O. Patard, C. Potier, L. Teisseire, Christian Dua, Stéphane Piotrowicz, J.C. Jacquet, Sylvain Delage
Publikováno v:
Microelectronics Reliability. :418-422
On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d35ca6456ffd4a9819376706a4149b9
https://doi.org/10.1016/j.microrel.2018.07.142
https://doi.org/10.1016/j.microrel.2018.07.142
Autor:
J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC)
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5766b9bd9074cac30bff4ad98d06099b
https://hal.archives-ouvertes.fr/hal-02460407
https://hal.archives-ouvertes.fr/hal-02460407
Autor:
J. Gruenenpuett, Piero Gamarra, Stéphane Piotrowicz, Eric Chartier, J.C. Jacquet, N. Michel, M. Oualli, Sylvain Delage, Christian Dua, Cedric Lacam, P. Altuntas, L. Trinh-Xuan, O. Patard, Christophe Chang, C. Potier
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28f3010523f0e0e8ec8c5bd2489bf741
https://doi.org/10.23919/eumic.2019.8909443
https://doi.org/10.23919/eumic.2019.8909443
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this work an average channel temperature of power InAIN/GaN HEMT prepared on SiC substrate has been investigated using quasi-static 1-V characterization. The analysis of drain current change depending on source resistance, threshold voltage and sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc48771ac9bda5bb2a36501d8f8cc28
https://doi.org/10.1109/asdam.2018.8544600
https://doi.org/10.1109/asdam.2018.8544600
Autor:
Stéphane Piotrowicz, J. Gruenenpuett, J.C. Jacquet, M. Madel, S. Riedmuller, Sylvain Delage, Ferdinand Scholz, G. Callet, Hervé Blanck, Christophe Chang
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7b5b899b2711ef2fcd3a10e356bf33
https://doi.org/10.23919/eumic.2018.8539955
https://doi.org/10.23919/eumic.2018.8539955
Autor:
J.C. Jacquet, O. Patard, P. Altuntas, C. Dua, C. Potier, M. Oualli, Stéphane Piotrowicz, E. Chartier, N. Michel, J. Gruenenpuett, S. L. Delage, P. Gamarra, C. Lacam, Christophe Chang
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414e23fca3d67917afa51a1fe1442672
https://doi.org/10.1109/inmmic.2018.8430000
https://doi.org/10.1109/inmmic.2018.8430000
Autor:
Didier Floriot, E. Charier, Stéphane Piotrowicz, J.C. Jacquet, N. Michel, Sylvain Delage, Hervé Blanck, M. Oualli, Christophe Chang, P. Altuntas, O. Patard, Christian Dua, Cedric Lacam, P. Fellon, C. Potier, Piero Gamarra
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
Recent results obtained using InAlGaN/GaN HEMT technology. Material advantages of this heterostructure are depicted and some technological aspects are described. Low lagging effects and high electric field capability is presented. Power densities up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902804d4ebcb1229064811676d9b0423
https://doi.org/10.23919/mikon.2018.8405186
https://doi.org/10.23919/mikon.2018.8405186
Autor:
Eric Chartier, Stéphane Piotrowicz, Cedric Lacam, N. Michel, Christian Dua, M. Oualli, Raphaël Aubry, Olivier Jardel, O. Patard, J.C. Jacquet, Sylvain Delage, C. Potier, Piero Gamarra
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
We report on the performances of 0.1-μm gate length In Al(Ga)N/GaN HEMT devices on SiC substrate. Measurements results of DC, pulsed I-V, S-parameters and load-pull power performances are presented. Devices exhibited a maximum DC transconductance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf54cda8eadbe9edb24dea013d99f99f
https://doi.org/10.1109/eumic.2016.7777491
https://doi.org/10.1109/eumic.2016.7777491
Autor:
C. Potier, J.C. Jacquet, L. Trinh Xuan, Philippe Bouysse, Raymond Quéré, Piero Gamarra, N. Michel, Stéphane Piotrowicz, M. Oualli, Raphaël Aubry, Sylvain Laurent, Sylvain Delage, D. Lancereau, O. Patard
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents the realization and characterization of normally-off recessed MOS-HEMTs on a Ka-band-dedicated AlGaN/GaN epitaxial structure. Previous HEMTs results on this structure feature an output power of 3.5 W/mm with PAE of 39 % at 30 GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad15734afff46639bb549fe0c1508948
https://doi.org/10.1109/eumic.2016.7777490
https://doi.org/10.1109/eumic.2016.7777490
Autor:
Robert Langer, Erwan Morvan, J. Thorpe, Christophe Gaquiere, N. Sarazin, Béla Pécz, Lajos Tóth, M. Tordjman, Raphaël Aubry, J. Di Persio, M.-A. di Forte Poisson, M. Magis, Virginie Hoel, Gaudenzio Meneghesso, Marek Guziewicz, Sylvain Delage, J.C. Jacquet
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩
Journal of Crystal Growth, 2008, 310 (23), pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩
Journal of Crystal Growth, Elsevier, 2008, 310, pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩
Journal of Crystal Growth, 2008, 310 (23), pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩
This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae1d64143ba5aed117bf021343399bd4
https://doi.org/10.1016/j.jcrysgro.2008.08.035
https://doi.org/10.1016/j.jcrysgro.2008.08.035