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Autor:
Lorenzo Mancini, Fabrice Oehler, A. V. Babichev, Hyun Gyu Song, Camille Barbier, François H. Julien, Joanna Njeim, Ali Madouri, Ludovic Largeau, Lutz Geelhaar, J.C. Harmand, Oliver Brandt, Antonella Cavanna, Yong-Hoon Cho, Nan Guan, Noelle Gogneau, Maria Tchernycheva, Martina Morassi, C. Sinito, Laurent Travers
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (45), pp.459501. ⟨10.1088/1361-6528/abaade⟩
Nanotechnology, Institute of Physics, 2020, 31 (45), pp.459501. ⟨10.1088/1361-6528/abaade⟩
International audience
Autor:
Maria Tchernycheva, Ludovic Largeau, C. Sinito, Laurent Travers, Fabrice Oehler, Antonella Cavanna, Ali Madouri, Francois H. Julien, A. V. Babichev, Hyun Gyu Song, Martina Morassi, Oliver Brandt, Lutz Geelhaar, Nan Guan, Yong-Hoon Cho, Joanna Njeim, Camille Barbier, Lorenzo Mancini, Noelle Gogneau, J.C. Harmand
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2019, 30 (21), pp.214005. ⟨10.1088/1361-6528/ab0570⟩
Nanotechnology, Institute of Physics, 2019, 30 (21), pp.214005. ⟨10.1088/1361-6528/ab0570⟩
Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcf76e031e1ca0fcda66ea0e94b060f5
https://hal.archives-ouvertes.fr/hal-02349609/document
https://hal.archives-ouvertes.fr/hal-02349609/document
Autor:
Fabrice Oehler, C. Himwas, Maria Tchernycheva, Gilles Patriarche, J.C. Harmand, Laurent Travers, P. Rale, François H. Julien, Stéphane Collin, Nicolas Chauvin
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2017, 28 (49), ⟨10.1088/1361-6528/aa9533⟩
Nanotechnology, Institute of Physics, 2017, 28 (49), ⟨10.1088/1361-6528/aa9533⟩
International audience; We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition energy was tuned to the optimal value required for tand
Autor:
F. Glas, L. Lu, Pascal Chrétien, Nicolas Jamond, J.C. Harmand, Maria Tchernycheva, Frédéric Houzé, Elie Lefeuvre, Noelle Gogneau, Laurent Travers, F. H. Julien
Publikováno v:
Eurosensors 2017
Eurosensors 2017, Sep 2017, Paris, France. pp.587, ⟨10.3390/proceedings1040587⟩
Proceedings, Vol 1, Iss 4, p 587 (2017)
Eurosensors 2017, Sep 2017, Paris, France. pp.587, ⟨10.3390/proceedings1040587⟩
Proceedings, Vol 1, Iss 4, p 587 (2017)
We report on a prototype of piezogenerator based on vertically-aligned GaN nanowires grown by Plasma-Assisted Molecule Beam Epitaxy (PAMBE). Our device generates a peak-to-peak voltage from 20 mV to 60 mV depending on the applied force. The output po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcf6bd3a2e62744c4a086b8df2bbb85a
https://hal-centralesupelec.archives-ouvertes.fr/hal-01591362
https://hal-centralesupelec.archives-ouvertes.fr/hal-01591362
Autor:
Hung-Ling Chen, Laurent Travers, J.C. Harmand, François H. Julien, Charlermchai Himwas, Maria Tchernycheva, Gilles Patriarche, Fabrice Oehler, Omar Saket, Stéphane Collin
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2019, 30 (30), pp.304001. ⟨10.1088/1361-6528/ab1760⟩
Nanotechnology, Institute of Physics, 2019, 30 (30), pp.304001. ⟨10.1088/1361-6528/ab1760⟩
International audience; We report on the structural and optical properties of GaAs 0.7 P 0.3 /GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission elect
Autor:
Alexandru Mereuta, Eli Kapon, J.C. Harmand, J-L Oudar, Zhuang Zhao, Jean Decobert, Sophie Bouchoule, Alexei Sirbu, Elisabeth Galopin, Laurence Ferlazzo
Publikováno v:
IEEE Journal of Quantum Electronics. 48:643-650
An electroplated copper substrate was evaluated for heat dissipation in 1.55-μ.m optically pumped vertical extended cavity surface emitting lasers (OP-VECSELs). It is a cost-effective and flexible solution compared with the previously proposed chemi
Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties
Publikováno v:
IEE Proceedings - Optoelectronics. 151:279-283
The authors further investigate the influence of growth temperature (Tg) on GaInNAs QWs grown on GaAs. 7 nm-thick GaInNAs QWs were grown with Tg in the range 400–470 °C. As a first result, transmission electron microscopy clearly showed that flat
Autor:
A. Martinez, Jean Landreau, J.C. Harmand, Laurence Ferlazzo, J.-G. Provost, A. Ramdane, Vincent Sallet, D. Jahan, O. Le Gouezigou, Beatrice Dagens
Publikováno v:
IEE Proceedings - Optoelectronics. 151:429-432
Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 μm are reported. Optimised molecular beam epitaxial (MBE) growth has allowed the achievement of a triple quantum well stack for improved dynamic p
Publikováno v:
Journal of Crystal Growth. 251:403-407
MBE-grown GaInNAs quantum wells (QWs) with and without surrounding GaNAs layers were investigated comparatively. It was demonstrated that introducing GaNAs layers extends efficiently its emission wavelength. However, at a given emission wavelength, t