Zobrazeno 1 - 10
of 98
pro vyhledávání: '"J.C. Dupuy"'
Publikováno v:
Surface and Interface Analysis. 45:376-380
The isotopic comparative method (ICM) has been used to measure the concentrations and relative ion yields of Si+, Ge+ (Si-, Ge-) in SiGe alloys ranging almost from pure silicon to pure germanium by secondary-ion mass spectrometry under Ar+ bombardmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c766358b692c7b3b0686e9c58ff7f4bc
https://doi.org/10.1002/sia.5137
https://doi.org/10.1002/sia.5137
Publikováno v:
Surface and Interface Analysis. 45:369-372
With the isotopic comparative method (ICM), we determined the ion yields of B+, O+, Si+, B−, O−, and Si− versus oxygen concentration in silicon under Ar+ bombardment. By multi-energy implantation, we obtained samples containing a near-uniform l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cca7146ec7d3b0b89cff300992aa99f
https://doi.org/10.1002/sia.5108
https://doi.org/10.1002/sia.5108
Autor:
J.C. Dupuy, Reinhard Kögler, G. Prudon, Angela Perrat-Mabilon, Brice Gautier, Shavkat Akhmadaliev, C. Dubois, Christophe Peaucelle
Publikováno v:
Surface and Interface Analysis. 43:137-140
Specific samples containing 18 O and 16 O are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. 18 O and 16 O are used to implement an Isotopic Comparative Method (ICM) which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3dba84668c8eb739867ece21e27472
https://doi.org/10.1002/sia.3657
https://doi.org/10.1002/sia.3657
Autor:
J.C. Dupuy, G. Prudon, Thierry Kociniewski, C. Dubois, Bruno Canut, Brice Gautier, Yann Le Gall
Publikováno v:
Surface and Interface Analysis. 43:36-40
This work extends the Isotopic Comparative Method, which has been previously introduced with the aim of correcting matrix effects, to quantify high concentrations of boron in silicon up to 40 at.% by SIMS technique. It requires a specific sample cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7355f942930a4fae5da84c8316d3c7d4
https://doi.org/10.1002/sia.3629
https://doi.org/10.1002/sia.3629
Publikováno v:
Applied Surface Science. 255:1946-1958
The continued reduction in the scaling of semiconductor components has pushed the technique of SIMS to achieve unprecedented degrees of high depth resolution. For this purpose, various deconvolution methods have been developed during the last decade,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f8e817dc895b244d9efecd125b7ecdd
https://doi.org/10.1016/j.apsusc.2008.06.124
https://doi.org/10.1016/j.apsusc.2008.06.124
Autor:
J.C. Dupuy, G. Bryce, Nicolas Gaillard, S. Chhun, J. Vitiello, V. Girault, M. Hopstaken, J. Guillan, Joaquim Torres, L.G. Gosset, B. Van Schravendijk, J. Michelon, Pascal Bancken, S. Courtas, R. Gras, Marc Juhel, L. Pinzelli, C. Debauche
Publikováno v:
Microelectronic Engineering. 83:2094-2100
Self-aligned barriers are widely investigated either in replacement of dielectric liners to decrease the total interconnect k value or as a treatment prior standard dielectric barrier deposition to improve reliability performances. In this paper, a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69f8a8c59131b6a249c8aad8379dfdd
https://doi.org/10.1016/j.mee.2006.09.013
https://doi.org/10.1016/j.mee.2006.09.013
Publikováno v:
Applied Surface Science. 252:6478-6481
In this paper, the deconvolution of SIMS profiles analysed at very low primary energy (0.5 keV/O 2 + ) is addressed. The depth resolution function (DRF) of the SIMS analysis in presence of roughness is established and a deconvolution procedure is imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0147f7f30e09b2439d5d94304c66cdb2
https://doi.org/10.1016/j.apsusc.2006.02.069
https://doi.org/10.1016/j.apsusc.2006.02.069
Publikováno v:
Applied Surface Science. 252:6448-6451
In this paper, the SIMS beam induced roughness (BIR) in monocrystalline Si in presence of initial surface or bulk defects of nanometric size is studied. We follow the development of the BIR by monitoring the increase of Si2+ and SiO2+ signals during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::397d438d4654ee410a0fb999c6691670
https://doi.org/10.1016/j.apsusc.2006.02.253
https://doi.org/10.1016/j.apsusc.2006.02.253
Autor:
Magali Gregoire, D. Delille, D. Ney, C. Trouiller, Brice Gautier, J.C. Dupuy, P. Chausse, M. Hopstaken, L.G. Gosset, N. Casanova, Joaquim Torres, S. Chhun
Publikováno v:
Microelectronic Engineering. 82:587-593
Self-aligned barriers have been widely investigated in the replacement of standard PECVD dielectric liners to decrease coupling capacitance. As an alternative to CVD or electroless approaches, a two step process based on the modification of the Cu su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a93ad638c3ca3b2b11a804540ca6e3a
https://doi.org/10.1016/j.mee.2005.07.061
https://doi.org/10.1016/j.mee.2005.07.061
Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon
Publikováno v:
Applied Surface Science. :678-683
The oxygen ion-beam-induced surface roughening observed during SIMS depth profiling of both Si(1 0 0) and 10° disoriented Si(1 0 0) surface without flooding has been studied by atomic force microscopy (AFM). Facets have been created at the crater bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2804d3e745273d64b86d3fa641e5fae3
https://doi.org/10.1016/j.apsusc.2004.03.178
https://doi.org/10.1016/j.apsusc.2004.03.178