Zobrazeno 1 - 10
of 60
pro vyhledávání: '"J.C. Dries"'
Autor:
Michael J. Lange, J.J. Sudol, J.C. Dries, P. Dixon, Marshall J. Cohen, A.R. Sugg, Gregory H. Olsen
Publikováno v:
Journal of Crystal Growth. 222:693-696
Low dark current (210 nA/cm2 at −1 V), high shunt resistance area product (0.3 MΩ cm2) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was deposited by organometallic vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b465a36f10c7dc6da10bba25cabbfdc0
https://doi.org/10.1016/s0022-0248(00)00939-8
https://doi.org/10.1016/s0022-0248(00)00939-8
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1407-1416
We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing. These circuits consist of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc51ad742428a5a8ad392aa9419ab99
https://doi.org/10.1109/3.605564
https://doi.org/10.1109/3.605564
Publikováno v:
IEEE Journal of Quantum Electronics. 33:2266-2276
We describe the design and experimental results for high-power, high-efficiency, low threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free InGaAs-(In)GaAs(P)-InGaP lasers. The decrease in the internal losses with an inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2073add18bea95f2eb9a5d0b80268ec7
https://doi.org/10.1109/3.644109
https://doi.org/10.1109/3.644109
Publikováno v:
IEEE Photonics Technology Letters. 14:977-979
We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 /spl mu/m) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc68ff5ec23f79dd1ffff7f5ecf4289
https://doi.org/10.1109/lpt.2002.1012404
https://doi.org/10.1109/lpt.2002.1012404
Publikováno v:
IEEE Photonics Technology Letters. 10:1088-1090
We demonstrate the monolithic integration of a 1.55 /spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser and a traveling-wave optical amplifier using an asymmetric, vertical twin-waveguide structure. The laser and amplifier share the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8359964a4f7b51fd57168d2f944689d8
https://doi.org/10.1109/68.701511
https://doi.org/10.1109/68.701511
Publikováno v:
IEEE Photonics Technology Letters. 10:42-44
The demonstration of an optimized strain compensated multiple-quantum-well (MQW) active region for use in 1.3-/spl mu/m wavelength lasers is described. Utilizing narrow bandgap tensile-strained InGaAsP instead of wide bandgap InGaP barriers in strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d67479b02f79c03a491a687525e23c
https://doi.org/10.1109/68.651096
https://doi.org/10.1109/68.651096
Publikováno v:
IEEE Photonics Technology Letters. 9:569-571
We demonstrate a monolithically integrated 1.55-/spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser with a passive Y-branch waveguide in a vertical twin-waveguide structure. To reduce the sensitivity of the device performance character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78085597c12cc8901682effff4f25d8e
https://doi.org/10.1109/68.588103
https://doi.org/10.1109/68.588103
Autor:
J.K. Forsyth, J.C. Dries
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Summary form only given. In this paper we present new data on the photon-counting performance of a number of commercial APDs, designed for linear operation in data communications applications at 2.5 Gb/sec. These data include dark count rate, quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2f7475e763167bedf48cd3e7e1a81b5
https://doi.org/10.1109/leos.2003.1253030
https://doi.org/10.1109/leos.2003.1253030
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
In this presentation, we discuss the design and fabrication of a densely packed array of InGaAs APDs where each pixel contains both a low-noise PIN imaging detector and a high band-width APD.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23bd6d7c0555b69d7ae710b273112e37
https://doi.org/10.1109/leos.2003.1252987
https://doi.org/10.1109/leos.2003.1252987
Publikováno v:
SPIE Proceedings.
We report on recent results in using InGaAs/InP focal plane arrays for visible light imaging. We have fabricated substrate-removed backside illuminated InGaAs/InP focal plane arrays down to a 10 μm pitch with high quantum efficiency from 0.4 μm thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa5af4573feacd40b33f672456c7ea5a
https://doi.org/10.1117/12.542523
https://doi.org/10.1117/12.542523