Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Autor: Jean-François Carlin, Jan Kuzmik, Clemens Ostermaier, M Gonschorek, Karol Fröhlich, K. Cico, Nicolas Grandjean, Christophe Gaquiere, Y. Douvry, Gottfried Strasser, J.C. Dejaeger, Werner Schrenk, G. Pozzovivo, Bernhard Basnar, Dionyz Pogany

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1854206da0c412b94d15d1be2475547f
https://doi.org/10.1109/led.2009.2029532

Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates

Autor: Nicolas Defrance, Robert Langer, J.C. Dejaeger, Philippe Bove, Virginie Hoel, Wilk Arnaud, Melania Lijadi, Hervé Blanck, J. Thorpe

Publikováno v: MRS Proceedings. 1108

Since the middle of the 90's, GaN epitaxy techniques have been developed, using either MOCVD or MBE growth methods. A low cost approach is presented aiming at satisfying thermal issues encountered on conventional substrates such as SiC, Sapphire and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b004f70b8bc43ac68066c9a13a1279e
https://doi.org/10.1557/proc-1108-a04-01

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances

Autor: B. Dessertene, A. Minko, J.C. Dejaeger, Benjamin Damilano, D. Adam, M. Surrugue, Franck Natali, Virginie Hoel, Fabrice Semond, Christophe Gaquiere, S. Cassette, Sylvain Delage, P. Lorenzini, Nicolas Vellas, J. C. Grattepain, Yvon Cordier, Nicolas Grandjean, Jean Massies

Publikováno v: International Conference on Molecular Bean Epitaxy.

For high-power and high-frequency electronic applications, the III-V nitride layers are usually grown on sapphire or silicon carbide substrates. However, the development of these applications on silicon substrates has obvious technological advantages

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f75e6e56a1b757cfd005785f358ea435
https://doi.org/10.1109/mbe.2002.1037778

Small-signal characteristics of AlInN/GaN HEMTs

Autor: M. Gonschorek, J.C. Dejaeger, Farid Medjdoub, J.-F. Carlin, Christophe Gaquiere, M. A. Py, Nicolas Grandjean, Erhard Kohn, S. Vandenbrouck

Publikováno v: Electronics Letters
Electronics Letters, IET, 2006, 42, pp.779-780
Electronics Letters, 2006, 42, pp.779-780

DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85bc1d1898b4467c08c5ef9b4f5a92ba
https://infoscience.epfl.ch/record/152868

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