Výsledky vyhledávání - "J.B. Quoirin"

Pure and Nb-doped TiO1.5 films grown by pulsed-laser deposition for transparent p–n homojunctions

Autor: J.B. Quoirin, Jacky Mathias, Nadia Sbai, Magda Nistor, F. Gherendi, Chantal Boulmer-Leborgne, Eric Millon, E. Le Boulbar

Publikováno v: Applied Surface Science. 257:5380-5383

Pure and Nb-doped titanium oxide thin films were grown on sapphire substrates by pulsed-laser deposition in vacuum (10 ―7 mbar). The PLD growth leads to titanium oxide thin films displaying a high oxygen deficiency (TiO 1.5 ) compared with the stoi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc3706de711ce1cb9b46d08d814a2a9d
https://doi.org/10.1016/j.apsusc.2010.10.149

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Silicon component development and experimentation for primary protection

Autor: J.Y. Hochet, J.B. Quoirin, R. Pezzani

Publikováno v: Proceedings of Intelec 93: 15th International Telecommunications Energy Conference.

Primary protection in telecommunication network equipment makes use of gas tube discharge elements but, due to many disadvantages, the authors have examined the capability of silicon products. Existing product studies, the definition of the need, exp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce9808996b92b4bce9fc3fbb3893aeed
https://doi.org/10.1109/intlec.1993.388535

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An above-IC RF-MEMS switch

Autor: P. Robert, S. Boret, Didier Belot, P.L. Charvet, J.B. Quoirin, Pascal Ancey, Daniel Saias, B. Diem, M. Aid, M. Laurens, B. Berruyer, Guillaume Bouche, C. Billard, J.C. Grasset

Publikováno v: 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b8d250b8e6111faec832aa7852f86c0
https://doi.org/10.1109/isscc.2003.1234269

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Low voltage high isolation MEMS switches

Autor: C. Zanchi, P. Charvet, J.B. Quoirin, B. Diem, P. Rey, P. Guillon, Pierre Blondy, D. Cros

Publikováno v: 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

This paper describes MEMS thermally actuated RF switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The structure allows one to build resistive switches at RF frequencies. The proces

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c564991a801b7c3ea85c4388b1064778
https://doi.org/10.1109/smic.2001.942339

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Packaged Millimeter Wave Thermal MEMS Switches

Autor: Dominique Cros, P. Charvet, Jacques Sombrin, P. Rey, P. Guillon, J.B. Quoirin, B. Diem, Pierre Blondy, L. Lapierre, D. Mercier, C. Zanchi

Publikováno v: Blondy, P. ; Mercier, D. ; Cros, D. ; Guillon, P. ; Rey, P. ; Charvet, P. ; Diem, B. ; Zanchi, C. ; Lapierre, L. ; Sombrin, J. ; Quoirin, J.B. (2001) Packaged Millimeter Wave Thermal MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

This abstract describes MEMS thermally actuated millimeter wave switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The resulting switches can be operated at low voltage, without sac

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Application of ionic microanalysis to the determination of boron depth profiles in silicon and silica

Autor: B. Blanchard, J.B. Quoirin, N. Hilleret

Publikováno v: Journal of Radioanalytical Chemistry. 12:85-94

The application of the ionic microanalyzer developed bySlodzian andCastaing and commercialized by CAMECA, to the determination of the depth profiles of an impurity in different materials is described; the materials chosen for this study were boron-do

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85ffbfb95cf6e4ba682616ac7712e989
https://doi.org/10.1007/bf02520978

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Electrical characterization of sipos mesa power transistors electric field repartition in the collector-base junction

Autor: A. Peyre-Lavigne, E. Khalil, M. Savelli, J.F. Bresse, J.B. Quoirin

Publikováno v: Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.733-736. ⟨10.1051/rphysap:019780013012073300⟩

2014 SIPOS mesa power transistors with large negative bevel angle, obtained by chemical etching, have been electrically tested especially using Scanning Electron Microscopy (S.E.M.) in Electron Beam Induced Current (E.B.I.C.) mode. Multiplication cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ffecfb58efaa569a40fcaece657c8a0
https://hal.archives-ouvertes.fr/jpa-00244536

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