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pro vyhledávání: '"J.B. Phipp"'
Autor:
T.D. Happ, J.B. Phipp, Min Yang, S. Raoux, R. Cheek, A.G. Schrott, Shoaib Hasan Zaidi, Y. Zhu, Y.-C. Chen, M. Lamorey, Hsiang-Lan Lung, T. Nirschl, Ming-Hsiu Lee, Bipin Rajendran, Matthew J. Breitwisch, R. Bergmann, C.-F. Chen, Geoffrey W. Burr, Chung H. Lam, Shih-Hung Chen, Eric A. Joseph
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We discuss novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles. Using a novel integration scheme, a test array at 4 bits/cell and a 32 kb memory page