Zobrazeno 1 - 10
of 224
pro vyhledávání: '"J.B. Mullin"'
Autor:
J.B. Mullin
Publikováno v:
Journal of Crystal Growth. 264:578-592
Semiconductor behaviour was predicted and discovered in the III–V semiconductor compounds almost 50 years ago at the beginning of the 50s. The demand for high-purity single crystals was axiomatic in view of the prior pioneering research on germaniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854abe3f4238d51208488e7668970d53
https://doi.org/10.1016/j.jcrysgro.2003.12.036
https://doi.org/10.1016/j.jcrysgro.2003.12.036
Autor:
L.S. Miller, J.B. Mullin
Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including
Publikováno v:
Journal of Materials Science Materials in Electronics. 8:333-336
Experiments carried out to fabricate HgxCd(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into such slices, where 0≤x≤0.03, unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e4d980a1877359f4927df7c53021df
https://doi.org/10.1023/a:1018595508268
https://doi.org/10.1023/a:1018595508268
Publikováno v:
Journal of Electronic Materials. 25:1260-1265
In this paper, results published recently on Hg diffusion in the important infrared detector material, Hg0.8Cd0.2Te, and its common substrate material, CdTe, are compared and discussed. As is customary with diffusion studies in II-VI semiconductors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc4beedaaaf3a40ce8bd104c331a42c
https://doi.org/10.1007/bf02655017
https://doi.org/10.1007/bf02655017
Publikováno v:
Journal of Crystal Growth. 161:223-228
The diffusion of Hg into CdTe has been studied, under saturated vapour pressure conditions, as a function of time at 300 and 350°C. The Hg concentration profiles showed two components at short and intermediate anneal times reverting to single compon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4617b63535d436867d06ecb1a68f289a
https://doi.org/10.1016/0022-0248(95)00651-6
https://doi.org/10.1016/0022-0248(95)00651-6
Publikováno v:
Journal of Crystal Growth. 159:1141-1147
The diffusion of Hg into CdTe under saturated vapour pressure conditions has been studied in the temperature range 160–403°C. Two component profiles were obtained and the diffusion was rate limited giving two values of the diffusivity. All Arrheni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8991e1623bb8ff7d8b1f189a97c4956
https://doi.org/10.1016/0022-0248(95)00698-2
https://doi.org/10.1016/0022-0248(95)00698-2
Publikováno v:
Materials Science Forum. :51-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e39ddee5f78028f824f74e61319831
https://doi.org/10.4028/www.scientific.net/msf.182-184.51
https://doi.org/10.4028/www.scientific.net/msf.182-184.51
Publikováno v:
Materials Science Forum. :63-68
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2140eeb34ab933b0c6ef97a236915c98
https://doi.org/10.4028/www.scientific.net/msf.182-184.63
https://doi.org/10.4028/www.scientific.net/msf.182-184.63
Publikováno v:
Journal of Crystal Growth. 146:136-141
In this paper the use of the three standard defect etches for CdTe: Nakagawa's reagent, ferric chloride and Inoue's EAg-1 reagent have been compared and it has been demonstrated, by measuring the etch pit densities (EPD), that Inoue's EAg-1 reagent c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c854ed2772246764a310ff803ae0b96
https://doi.org/10.1016/0022-0248(94)00478-1
https://doi.org/10.1016/0022-0248(94)00478-1
Publikováno v:
Journal of Crystal Growth. 138:274-278
The diffusion of zinc into bulk grown cadmium telluride has been studied at 800°C as a function of anneal time and mass of the diffusion source. The diffusions were carried out in evacuated silica ampoules and the diffusion profiles were measured us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baead393094183bf9177e7dce4ed3aaa
https://doi.org/10.1016/0022-0248(94)90820-6
https://doi.org/10.1016/0022-0248(94)90820-6