Zobrazeno 1 - 10
of 38
pro vyhledávání: '"J.B. McKitterick"'
Autor:
R. A. B. Devine, William L. Warren, W.P. Maszara, J.B. McKitterick, Marty R. Shaneyfelt, Daniel M. Fleetwood, J.R. Schwank, P.S. Winokur
Publikováno v:
IEEE Transactions on Nuclear Science. 40:1755-1764
Electron paramagnetic resonance (EPR) and capacitance-voltage measurements have been combined to identify the chemical nature and charge state of defects in BESOI (bonded and etchback silicon-on-insulator) and SIMOX (separation by implantation of oxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bead6c9c5e7ffbeede694f7d6c6d1eee
https://doi.org/10.1109/23.273482
https://doi.org/10.1109/23.273482
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2098-2102
The response of the buried oxide in bonded and etched-back silicon-on-insulator (SOI) wafers to radiation doses up to 2 Mrad(Si) was measured. The results indicate that the hardness of the buried oxide can be very good, at least that of a good therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0113ba34e40079dd56ea73915fd797ec
https://doi.org/10.1109/23.211408
https://doi.org/10.1109/23.211408
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2086-2097
Shallow electron and deep hole trapping in the buried oxides of SIMOX (separation by implantation of oxygen), ZMR, and BESOI (bond and etchback silicon-on-insulator) material are examined. By irradiating the oxides with X-rays at cryogenic temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40cb8f4741b65db3ebc76beee28a48fa
https://doi.org/10.1109/23.211407
https://doi.org/10.1109/23.211407
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd489f0b155ed3e9555f6fbf3519b16
https://doi.org/10.1109/soi.1992.664783
https://doi.org/10.1109/soi.1992.664783
Autor:
J.B. McKitterick
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. The problem of premature source-drain breakdown in thin SOI FETs is studied, both numerically with PISCES and analytically, with the gate voltages set so that the device is off. The analysis indicates that an LDD structure is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27eaabb2abd8e127db3fc1e9ad869505
https://doi.org/10.1109/soi.1989.69744
https://doi.org/10.1109/soi.1989.69744
Autor:
A.L. Caviglia, J.B. McKitterick
Publikováno v:
Proceedings. SOS/SOI Technology Workshop.
Summary form only given. Devices made in very thin films (1000 AA or less) have a number of characteristics which are different from those of devices made in bulk material or thick SOI. In order to design these devices properly, it is important to un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0bcf283844cd7477e396ff2a60020c
https://doi.org/10.1109/soi.1988.95415
https://doi.org/10.1109/soi.1988.95415
Autor:
William L. Warren, R. A. B. Devine, Marty R. Shaneyfelt, W.P. Maszara, P.S. Winokur, J.B. McKitterick, Daniel M. Fleetwood, J.R. Schwank
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3405e58f2a8c1343d2262d95ae47d23
https://doi.org/10.1109/soi.1993.344606
https://doi.org/10.1109/soi.1993.344606
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
Silicon-on-insulator (SOI) materials are known to possess many features attractive for use in microelectronic applications. To take advantage of these features, it is important to understand and characterize the effects of ionizing radiation on the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f46c10652f37e2e3583d5a198b4349a
https://doi.org/10.1109/soi.1993.344605
https://doi.org/10.1109/soi.1993.344605
Autor:
J.B. McKitterick
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
It is universally assumed that impact ionization has no noticeable effects in FETs at low drain voltages, e.g. 0.1 volts. It is pointed out that in SOI FETs without a body contact the effects of impact ionization, though somewhat subtle, are signific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4ad81f33495d2a7b7ba6c0c6d0e2dc
https://doi.org/10.1109/sossoi.1990.145734
https://doi.org/10.1109/sossoi.1990.145734
Publikováno v:
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).
A high-temperature lateral power MOS field-effect transistor on silicon-on-insulator (SOI) material has been demonstrated to operate up to at least 300/spl deg/C. This device is targeted initially for high-temperature applications such as engine cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978a7c69ffec8ac2c17e1feecd2dfe67
https://doi.org/10.1109/hitec.1998.676789
https://doi.org/10.1109/hitec.1998.676789