Zobrazeno 1 - 10
of 89
pro vyhledávání: '"J.B. Casady"'
Autor:
Phillip Albert Sanger, Sita S Mani, M.F MacMillan, S. Seshadri, Pankaj B. Shah, Anant K. Agarwal, J.B. Casady
Publikováno v:
Solid-State Electronics. 44:303-308
This paper presents an overview of SiC power devices. The progress in pn junction diode development is described. The data on 10 A, 1000 V, packaged 4H–SiC ion-implanted p + nn + diode are presented. It is found that in order to develop high voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f16c1a79fbcf8dc5aba7e15c21b452
https://doi.org/10.1016/s0038-1101(99)00236-1
https://doi.org/10.1016/s0038-1101(99)00236-1
Autor:
M.F MacMillan, J.B. Casady, S.S Mani, Nelson S. Saks, C.D. Brandt, V. Balakrishna, A.A. Burk, P.A. Sanger, G Augustine, Anant K. Agarwal, R. Rodrigues, S. Seshadri
Publikováno v:
Diamond and Related Materials. 8:295-301
This paper presents an overview of SiC power devices. The progress in P–N diode development is described. It is found that in order to develop high voltage, high current diodes, it is critical to reduce dislocation density below 103 cm−2, and inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b91114639bacf7eebf93ef9d20e632d
https://doi.org/10.1016/s0925-9635(98)00314-8
https://doi.org/10.1016/s0925-9635(98)00314-8
Publikováno v:
Solid-State Electronics. 39:777-784
6HSiC depletion-mode, n-channel MOSFETs were analyzed across the temperature range of 295–723 K. Effective channel mobilities ranged from 94 cm2V−1·s−1 at 296K to about 20 cm2V−1·s−1 in the five devices measured. Small-signal voltage g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26d35eb99d37b8709f95ba3be9c692a
https://doi.org/10.1016/0038-1101(95)00420-3
https://doi.org/10.1016/0038-1101(95)00420-3
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 19:416-422
6H-SiC buried-gate n-channel depletion-mode junction field-effect transistors (JFETs) were characterized from 25/spl deg/C to 350/spl deg/C in terms of transconductance (g/sub m/), pinchoff voltage (V/sub P/), output resistance (r/sub o/), input resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c89706da10eb63f9b4ed36768695223
https://doi.org/10.1109/95.536843
https://doi.org/10.1109/95.536843
Publikováno v:
IEEE Electron Device Letters. 18:586-588
Silicon Carbide (4H-SiC), power UMOSFETs were fabricated and characterized from room temperature to 200/spl deg/C. The devices had a 12-/spl mu/m thick lightly doped n-type drift layer, and a nominal channel length of 4 /spl mu/m. When tested under F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::027da79c105c6ca49390e8a51a7e1077
https://doi.org/10.1109/55.644079
https://doi.org/10.1109/55.644079
Publikováno v:
IEEE Electron Device Letters. 16:274-276
The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10/sup 5/ Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb540d76ca096f0efb3520bdd2281ed3
https://doi.org/10.1109/55.790733
https://doi.org/10.1109/55.790733
Publikováno v:
1995 Proceedings. 45th Electronic Components and Technology Conference.
6H-SiC buried-gate n-channel depletion-mode Junction Field-Effect Transistors (JFETs) manufactured by Cree Research, Inc. were characterized from 25 to 350/spl deg/C in terms of transconductance (g/sub m/), pinchoff voltage (V/sub p/), output resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dee5ebbb6cbc63ed228811501243ade
https://doi.org/10.1109/ectc.1995.514394
https://doi.org/10.1109/ectc.1995.514394
Publikováno v:
1995 Proceedings. 45th Electronic Components and Technology Conference.
6H-SiC MESFETs with 1 mm gate width and 10 /spl mu/m gate length were manufactured on commercially available production grade 6H-SiC substrates purchased from Cree Research, Inc. While numerous SiC devices such as MESFETs, MOSFETs, thyristors, and di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57016e9a8f46e6423d3b3a8982e0a837
https://doi.org/10.1109/ectc.1995.514395
https://doi.org/10.1109/ectc.1995.514395
Autor:
Richard R. Siergiej, Suresh Seshadri, C.D. Brandt, Larry B. Rowland, J.B. Casady, Anant K. Agarwal, M.F MacMillan, Greg T. Dunne, Phillip A. Sanger
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66af2427f8e9a2e4db28ae065eb19756
https://doi.org/10.4271/981284
https://doi.org/10.4271/981284
Autor:
Rowland C. Clarke, A.K. Agarwal, S. Sriram, R.R. Siergiej, J.B. Casady, A.W. Morse, C.D. Brandt
Publisher Summary This chapter discusses the applications of silicon carbide (Sic) in high-power electronics. Most traditional integrated circuit technologies using silicon devices are not able to operate at temperatures above 250°C especially when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e2f1390cc94e06b8ca5c9657105d1a9
https://doi.org/10.1016/s0080-8784(08)62847-1
https://doi.org/10.1016/s0080-8784(08)62847-1
