Zobrazeno 1 - 10
of 305
pro vyhledávání: '"J.B. Boos"'
Publikováno v:
2019 International Vacuum Electronics Conference (IVEC).
We demonstrate field emission from planar graphene edges fabricated using a new method. The device uses narrow cantilevered metal beams to support the graphene. To date we have measured emission currents over 10μA from edges less than 50μm long, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca19a4355f25d58b8781bd0254a3af6
https://doi.org/10.1109/ivec.2019.8744785
https://doi.org/10.1109/ivec.2019.8744785
Publikováno v:
Journal of Electronic Materials. 45:2757-2762
Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0745ef522103706ff7784816aff5fa5f
https://doi.org/10.1007/s11664-016-4440-6
https://doi.org/10.1007/s11664-016-4440-6
Publikováno v:
Journal of Applied Physics. 125:054502
We demonstrate field emission from an integrated three-terminal device using a suspended planar graphene edge as the source of vacuum electrons. Energy spectra of the emitted electrons confirm the field-emission mechanism. The energy spectra produced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4334e62e1b0eeef1cae32a2b5445071
https://doi.org/10.1063/1.5064366
https://doi.org/10.1063/1.5064366
Publikováno v:
IEEE Transactions on Nuclear Science. 59:3077-3080
We present the results of a radiation damage experiment on AlxGa1-xN/GaN high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f09ed4f8aecae2777041c9eeea8538
https://doi.org/10.1109/tns.2012.2224371
https://doi.org/10.1109/tns.2012.2224371
Autor:
Krishna C. Saraswat, Yoshio Nishi, Brian R. Bennett, Toshifumi Irisawa, Ze Yuan, J.B. Boos, Aneesh Nainani
Publikováno v:
IEEE Transactions on Electron Devices. 58:3407-3415
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and high drive currents, hole mobility in III-V p-channel MOSFETs (pMOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c6177ae3ff8ce1bd8adb6631fdfa37
https://doi.org/10.1109/ted.2011.2162732
https://doi.org/10.1109/ted.2011.2162732
Autor:
Suman Datta, J.B. Boos, Ashish Agrawal, Peter Schiffer, H. Madan, Brian R. Bennett, A. Ali, Rajiv Misra
Publikováno v:
IEEE Transactions on Electron Devices. 58:1397-1403
Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance (CQ) and centroid capacitance (Ccent). The nonparabolic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46679218b84aef68ea0d4ea75e62011f
https://doi.org/10.1109/ted.2011.2110652
https://doi.org/10.1109/ted.2011.2110652
Publikováno v:
Solid-State Electronics. 54:1349-1358
Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen to be those measured experimentally in state-of-the-art high-mobility materials, and where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2466258de57f40568b2738e3726346
https://doi.org/10.1016/j.sse.2010.06.022
https://doi.org/10.1016/j.sse.2010.06.022
Publikováno v:
Journal of Lightwave Technology. 26:408-416
Recent progress in high-current photodiodes now makes it possible to efficiently generate over 26 dBm of RF power directly from the output of a photodiode. This paper describes two photodetector designs which demonstrate excellent large- and small-si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11af04af6ffb477253ede3226e91f87b
https://doi.org/10.1109/jlt.2007.912503
https://doi.org/10.1109/jlt.2007.912503
Autor:
V. Ferlet-Cavrois, Joseph S. Melinger, J. Baggio, J.B. Boos, Dale McMorrow, P. Paillet, Olivier Duhamel
Publikováno v:
IEEE Transactions on Nuclear Science. 54:1010-1017
Recent measurements of heavy-ion-induced charge- collection transients are presented. These measurements are possible for the first time because of recent developments in high- bandwidth, single-shot measurement technology, and exhibit several signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb02033f67a7462c99ab29e6f5645c4
https://doi.org/10.1109/tns.2007.896345
https://doi.org/10.1109/tns.2007.896345
Publikováno v:
IEEE Transactions on Electron Devices. 54:1193-1202
A comprehensive examination of the low-frequency noise characteristics of AlSb/InAs and related high-electron mobility transistors (HEMTs) in the 6.1-Aring-lattice-constant material system is reported. The effect of gate bias on the noise of devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95ad8b87ecb85707aa38f1497616208
https://doi.org/10.1109/ted.2007.893658
https://doi.org/10.1109/ted.2007.893658