Zobrazeno 1 - 10
of 68
pro vyhledávání: '"J.A. Spitznagel"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee5b2560fb2659e84b07787c2ff1ba0
https://doi.org/10.1201/9781003069621-83
https://doi.org/10.1201/9781003069621-83
The postirradiation annealing response of one SA 302 Grade B plate material and two high-copper weld metals irradiated at 550°F (288°C) was measured for annealing temperatures in the range 600°F (316°C) to 850°F (454°C) and annealing times up t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed9f0c4385cdc582bc40f7eedb28f336
https://doi.org/10.1520/stp38064s
https://doi.org/10.1520/stp38064s
Specimens of 20 percent cold-worked (CW) and solution-annealed (SA) 316 stainless steel were either dually bombarded with ≤ 2 MeV helium and 28 MeV Si + 6 or hot preinjected with helium and subsequently bombarded with 28 MeV Si + 6 in the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c8be2db0dc5cba16520839fcf8d755
https://doi.org/10.1520/stp28229s
https://doi.org/10.1520/stp28229s
The work demonstrates that changes in Charpy V-notch impact properties can be monitored by microhardness measurements for radiation-embrittled ferritic steels in the transition region. A qualitative basis for understanding this relationship is develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::820468c486731a25633a64ccbe3a0805
https://doi.org/10.1520/stp28204s
https://doi.org/10.1520/stp28204s
Publikováno v:
Journal of Nuclear Materials. :537-543
A multikey computer file system and several algorithms relating measured cavity size distributions, point defect sink strengths and an equation of state for helium atoms in gas bubbles have been used to determine lower bound critical cavity sizes fro
Autor:
R. Jayaram, J.A. Spitznagel
Publikováno v:
Le Journal de Physique Colloques. 49:C6-503
Autor:
J. N. McGruer, J.R. Townsend, W. J. Choyke, N.J. Doyle, J. H. Chang, P. Hegland, J. Greggi, C. F. Tzeng, J.A. Spitznagel
Publikováno v:
Radiation Effects. 60:73-84
Single crystals of Mo were bombarded with 86Kr, 2ONe, 11B, 4He, and 1H in such a manner that the energy deposited into elastic collisions (displacement events) in the near surface region was approximately equal for each implant. The ion fluences span
Publikováno v:
Scripta Metallurgica. 14:211-214
Some microstructural observations from solution annealed SA 316 SS after dual ion bombardment are presented which reveal a tendency for cavity alignment and enhanced cavity growth and coalescence under specific helium damage and temperature condition
Autor:
Wolfgang J. Choyke, J.D. Yesso, J.R. Townsend, J. H. Chang, N.J. Doyle, F.J. Venskytis, J.N. McGruer, J.A. Spitznagel
Publikováno v:
Journal of Nuclear Materials. 74:174-177
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :287-292
This study has explored the role of interstitial oxygen concentration and oxide precipitation on the mechanical response of ion implanted single crystal silicon surfaces. Samples of FZ, CZ and web silicon have been implanted with 50 keV to 150 keV hy