Zobrazeno 1 - 10
of 115
pro vyhledávání: '"J.A. Roger"'
Publikováno v:
Journal of Luminescence. 121:507-516
Tin oxide (SnO 2 )-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide. The emission properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b13612fed12b78e173436077e481bf0
https://doi.org/10.1016/j.jlumin.2005.12.003
https://doi.org/10.1016/j.jlumin.2005.12.003
Publikováno v:
physica status solidi (a). 202:1508-1512
Tin dioxide doped with antimony (SnO 2 :Sb) and sol-gel doped with terbium (Tb 3+ ) were deposited on porous silicon (PS) layers and on monocrystalline Si wafers. Energy dispersive X-ray (EDX) analysis and Auger electron spectroscopy (AES) show the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f76d216e01a067690adf5449dc5c6e
https://doi.org/10.1002/pssa.200461163
https://doi.org/10.1002/pssa.200461163
Publikováno v:
physica status solidi (c). 2:3349-3353
The incorporation of antimony doped tin oxide (SnO2:Sb), prepared from the sol gel method, into luminescent porous silicon (PS) layers is investigated. Characterisation of the resulting structures by photoluminescence (PL) is presented. It shows that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2114950f6b994ba72096ac19ad3b7361
https://doi.org/10.1002/pssc.200461165
https://doi.org/10.1002/pssc.200461165
Publikováno v:
Materials Science and Engineering: B. 105:157-160
Europium or terbium and europium have been incorporated into luminescent porous silicon (Eu3+/PS and (Eu3++Tb3+)/PS) by simple impregnation of PS layers with chloride solution of rare earth. This impregnation has been followed by Rutherford back-scat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4957cc1a365726a62ee78efe192e5730
https://doi.org/10.1016/j.mseb.2003.08.036
https://doi.org/10.1016/j.mseb.2003.08.036
Publikováno v:
Materials Science and Engineering: B. 105:8-11
Terbium (Tb 3+ ) and europium (Eu 3+ )-doped tin oxide (SnO 2 ) was prepared using the sol–gel method in order to form SnO 2 :Tb 3+ and SnO 2 :Eu 3+ nanocomposites on monocrystalline Si wafers and porous Si (PS) substrates. The energy dispersive X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d9f505f1eef32d7419081cc5791f6e
https://doi.org/10.1016/j.mseb.2003.08.005
https://doi.org/10.1016/j.mseb.2003.08.005
Publikováno v:
Thin Solid Films. 445:20-25
Indium Tin Oxide (ITO) thin films have been deposited by the Sol–Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7905e158c9d4164eca15525d6b5a34a
https://doi.org/10.1016/s0040-6090(03)01061-7
https://doi.org/10.1016/s0040-6090(03)01061-7
Autor:
Brahim Bessais, Valentin S. Teodorescu, A. Moadhen, Corneliu Ghica, Kais Daoudi, Meherzi Oueslati, M.G. Blanchin, J.A. Roger, Bruno Canut, C.S Sandu
Publikováno v:
Materials Science and Engineering: B. 101:262-265
Porous silicon (PS)-based structures were formed by deposition of an indium tin oxide (ITO) onto PS surface using the sol–gel spin coating route. Two types of thermal annealing processes, classical and rapid thermal annealing, were used in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f4b072c3026097e4f47159c06e0c0e
https://doi.org/10.1016/s0921-5107(02)00693-1
https://doi.org/10.1016/s0921-5107(02)00693-1
Publikováno v:
Semiconductor Science and Technology. 18:703-707
SnO2:Sb sol–gel derived thin films doped with Tb3+ were deposited on porous silicon (PS) layers. Transmission electron microscopy observations, electron diffraction patterns and energy dispersive x-ray analysis revealed the crystallization of small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c986ba52d137b984f313eec40db7c2ef
https://doi.org/10.1088/0268-1242/18/7/319
https://doi.org/10.1088/0268-1242/18/7/319
Publikováno v:
physica status solidi (a). 197:350-354
Tin oxide doped with europium (SnO 2 : Eu 3+ ) or doped with europium and terbium (SnO 2 : (Eu 3+ + Tb 3+ )), prepared from the sol-gel technique, is incorporated into luminescent porous silicon (PS) layers. Rutherford Backscattering (RBS) measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351e8b88e7dddde5d5d04791147fea9d
https://doi.org/10.1002/pssa.200306523
https://doi.org/10.1002/pssa.200306523
Autor:
M. Ferid, Meherzi Oueslati, Bruno Canut, Kais Daoudi, J.A. Roger, H. Elhouichet, A. Moadhen, C.S Sandu
Publikováno v:
physica status solidi (a). 197:360-364
Porous silicon (PS) doped with terbium (Tb 3+ ) has been prepared by impregnation of PS layers with chloride solution of terbium. The dependency of photoluminescence (PL) intensity on the Tb 3+ concentration has been studied. Rutherford Back-scatteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f0932b6f9b452178f1fb58b06885e1a
https://doi.org/10.1002/pssa.200306525
https://doi.org/10.1002/pssa.200306525