Zobrazeno 1 - 10
of 19
pro vyhledávání: '"J.A. Rocca"'
Publikováno v:
Anales (Asociación Física Argentina), Vol 35, Iss 3, Pp 65-70 (2024)
Chalcogenide glasses are within the group of phase change materials and are promising in their application to non-volatile electronic memories. Under electrical pulses, they can circulate between two amorphous and crystalline structural states that a
Externí odkaz:
https://doaj.org/article/29b7330b57cc47d997139e1e6fe1f675
Akademický článek
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Autor:
O. Cuellar Rodríguez, M.A. Ureña, M. Fontana, Bibiana Arcondo, Daniel Errandonea, H.H. Medina Chanduví, Leonardo A. Errico, A.V. Gil Rebaza, Vitaliy Bilovol, A.M. Mudarra Navarro, J.A. Rocca
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
(Sb 0.70 Te 0.30 ) 100-x Sn x alloys (with x = 0, 2.5, 5.0 and 7.5 at. %)have been synthesized and characterized in order to determine the crystalline structure and properties of materials obtained upon solidification and to extract information about
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::892c13d2a3edf94a6d950b136682a68d
https://www.sciencedirect.com/science/article/abs/pii/S0925838819315026
https://www.sciencedirect.com/science/article/abs/pii/S0925838819315026
Autor:
H.H. Medina Chanduví, M. Fontana, Alejandro Ureña, A. Liang, A.V. Gil Rebaza, J.A. Rocca, Daniel Errandonea, Leonardo A. Errico, Vitaliy Bilovol, A.M. Mudarra Navarro
Publikováno v:
Journal of Alloys and Compounds. 845:156307
Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb70Te30 thin films show a sharp fall in the electrical resistance in
Publikováno v:
Journal of Solid State Chemistry. 285:121249
SnSb2Te4, an intermetallic compound in the pseudobinary SnTe-Sb2Te3 system, looks like a promising candidate as a phase-change material for non-volatile memories applications. As made thin film grown by pulsed laser deposition, ablating a layered tri
Akademický článek
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Publikováno v:
Journal of Alloys and Compounds. 536:S516-S521
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model u
Publikováno v:
Journal of Non-Crystalline Solids. 355:2068-2073
One of most important properties of some tellurium-based chalcogenide glasses is the optical and electrical switching between two states: the glass and the crystalline state. The understanding in these systems of the glass to crystal transition and i
Publikováno v:
Hyperfine Interactions. 182:137-147
Ag–Ge–Se system is an easy glass former in a wide composition range not far from the Se corner of the equilibrium phase diagram. The existence of a liquid miscibility gap impacts on the glass morphology where Ag-rich zones alternate with Ag deple
Publikováno v:
Physica B: Condensed Matter. 404:2816-2818
Ge y Se (1―y) glasses are semiconductors but when Ag is added above certain threshold concentration, Ag x [Ge y Se (1―y) ] (100―x) glasses behave as fast ionic conductors [Urena et al., Solid State lonics 176 (2005) 505]. This peculiar behavior