Zobrazeno 1 - 10
of 62
pro vyhledávání: '"J.A. Pals"'
Publikováno v:
Philips Journal of Research. 49:1-10
For more than thirty years Philips Research has been engaged in direct bonding. A survey is given of how what was first the study of an optical technology gradually changed into the development of special applications in semiconductor technology. Coo
Publikováno v:
Physica Scripta. 38:212-215
Fluctuations in the Hall and Shubnikov-de Haas voltages were studied on a CaAs/AlxGa1-xAs heterostructure operating in the integral quantized Hall regime. In the spectral noise intensities two contributions could be distinguished, i.e., a frequency a
Publikováno v:
Superlattices and Microstructures. 5:255-258
We have investigated the spectral noise intensity of the Hall voltage and the Shubnikov-de Haas voltage of a GaAs/Al x Ga 1−x As (x = 0.34) heterostructure operating under quantum Hall conditions. In the spectra three contributions could be disting
Publikováno v:
Physical Review B. 27:1623-1628
We studied the dependence on supercurrent density of the enhancement by microwaves of the order parameter in superconducting aluminum films. Experiments were made on a superconducting circuit that includes an aluminum strip and the input coil of a su
Publikováno v:
Le Journal de Physique Colloques. 39:C6-523
Autor:
J.A. Pals, W. van Haeringen
Publikováno v:
Physica B+C. 92:360-365
An expression is derived for the Josephson current between two weakly coupled superconductors of which one or both have pairs in a spin-triplet state. It is shown that there can be no Josephson effect up to second order in the transition matrix eleme
Publikováno v:
Solid State Communications. 60:831-834
We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations.
Autor:
J.A. Pals
Publikováno v:
Physics Letters A. 61:275-278
In contrast to previously reported results the critical current in superconducting Al strips under microwave irradiation is shown to reach a maximum value before decreasing continuously to zero with increasing microwave power. The influence of local
Publikováno v:
Solid State Communications. 42:127-131
Experimentally is found that at constant temperatures the order-parameter relaxation time, τΔ, decreases with increasing power of the microwaves, coupled into a superconducting strip. If the same increase in critical current, that corresponds with
Autor:
J.A. Pals
Publikováno v:
Solid-State Electronics. 17:1139-1145
Measurements of emission rates and majority carrier capture cross-sections of Au, Pt, Pd and Rh centres in silicon are reported, and the activation energies associated with the different levels of these centres are determined. Where appropriate, our