Zobrazeno 1 - 10
of 211
pro vyhledávání: '"J.A. Kittl"'
Publikováno v:
Journal of Materials Research. 7:2003-2016
We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3815000afbb2fd640fc6033754658322
https://doi.org/10.1557/jmr.1992.2003
https://doi.org/10.1557/jmr.1992.2003
Autor:
S. Biesemans, P.P. Absil, M. Jurczak, J.D. Chen, M.F. Li, K.De. Meyer, M. van Dal, B. Froment, A. Rothchild, M. Demand, R. Verbeeck, B. Onsia, S. Mertens, T. Hoffmann, C. Vrancken, S. Brus, A. Veloso, E. Augendre, S. Kubicek, C. Demeurisse, R. Singanamalla, A. Lauwers, J.A. Kittl, H.Y. Yu
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
This report discusses a new and practical approach to implement low Vt bulk CMOS using Ni-based FUSI MOSFETs. On the nFET, we demonstrate for the first time that incorporating Yb by ion implantation can achieve similar reduction of effective work fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9df603285a2c56acad999c2306ac3f
https://doi.org/10.1109/vlsit.2006.1705235
https://doi.org/10.1109/vlsit.2006.1705235
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
The fundamental issues for extension of a Ti salicide process to 0.1 /spl mu/m gate length CMOS technologies are presented for the first time. We report the first process to achieve low sheet resistance of 4 /spl Omega//sq at an ultra-narrow 0.10 /sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb8f2f4395b297a48d422829a2b6dd1
https://doi.org/10.1109/vlsit.1996.507775
https://doi.org/10.1109/vlsit.1996.507775
Autor:
Chih-Ping Chao, K.E. Violette, R.L. Wise, Ih-Chin Chen, J.A. Kittl, S. Unnikrishnan, Mahalingam Nandakumar, Qi-Zhong Hong
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
Raised source/drain (R/SD) CMOS transistors with Co or Ti salicide to improve narrow-poly sheet resistance and diode leakage are studied. At 0.11 /spl mu/m gate length, low resistance of 2 /spl Omega//sq and 1.2 /spl Omega//sq are achieved for CoSi/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6904d66f08825e99cb63e4be4b264bd2
https://doi.org/10.1109/iedm.1997.649474
https://doi.org/10.1109/iedm.1997.649474
Autor:
H.L. Tsai, J.A. Kittl, Qi-Zhong Hong, S. Krishnan, W.T. Shiau, C.P. Chao, Ih-Chin Chen, R.H. Havemann, H. Yang
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
This paper presents a comprehensive study of four diode leakage reduction methods, i.e. pre-metal deposition sputter clean, pre-metal deposition amorphization implant, high temperature silicidation, and high temperature metal deposition, for Co salic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c96df61affd7924c3ec0da95f06018
https://doi.org/10.1109/iedm.1997.649475
https://doi.org/10.1109/iedm.1997.649475
Publikováno v:
Materials Letters. 9:336-338
We have studied the in situ growth of YBa 2 Cu 3 O 7−δ thin films by sequential ion beam sputtering. Films were grown following the stacking sequence of the “1–2–3” compound, with deposited layer thicknesses nominally equal to one monolaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc78aaff3bc049e663de6df43721043f
https://doi.org/10.1016/0167-577x(90)90174-k
https://doi.org/10.1016/0167-577x(90)90174-k
Akademický článek
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Autor:
Johan Swerts, M.M. Salimullah, M. Popovici, M.-S. Kim, M.A. Pawlak, A. Delabie, M. Schaekers, K. Tomida, B. Kaczer, K. Opsomer, C. Vrancken, I Debusschere, L. Altimime, J.A. Kittl, S. Van Elshocht
Publikováno v:
ECS Meeting Abstracts. :1842-1842
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f858b5749be5335694aec7fb41f98bbc
https://doi.org/10.1149/ma2011-02/26/1842
https://doi.org/10.1149/ma2011-02/26/1842
Autor:
Mark van Dal, A. Lauwers, J. Cunniffe, R. Verbeeck, C. Vrancken, C. Demeurisse, J.A. Kittl, K. Maex
Publikováno v:
ECS Meeting Abstracts. :634-634
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3eb798a639ee4f9175fea3f0959a82
https://doi.org/10.1149/ma2005-01/14/634
https://doi.org/10.1149/ma2005-01/14/634
Akademický článek
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