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Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
In/sub x/Ga/sub 1-x/As QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL) study. We have established the relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix. In highly str