Zobrazeno 1 - 10
of 31
pro vyhledávání: '"J.A. Calviello"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Newly developed GaAs beam-lead diodes have been used in mixers covering the millimeter bands of 35 to 50 GHz, 70 to 90, and 90 to 120 GHz. The mixers were tested at room temperature and achieved the following single sideband conversion losses: 4 to 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a7168cad69be2e8deb6f1c871b0308
https://doi.org/10.1109/mwsym.1982.1130664
https://doi.org/10.1109/mwsym.1982.1130664
Autor:
J.L. Wallace, J.A. Calviello
Publikováno v:
IEEE Transactions on Electron Devices. 24:698-704
We have developed a reliable, high-performance, batch-processed, GaAs tantalum Schottky diode (with a gold overlayer) and native-oxide passivated junction1in a quasi-planar configuration, Varactors and mixers have been fabricated with near-ideal char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e334e21c69e43b751e378736ba40eb8
https://doi.org/10.1109/t-ed.1977.18806
https://doi.org/10.1109/t-ed.1977.18806
Publikováno v:
IEEE Transactions on Electron Devices. 32:2844-2847
A GaAs Schottky-drain [1] power FET (SDFET) having a 2.4-mm gate periphery and 1.5-µm gate length has been developed, and it realized excellent performance at 10 GHz. This includes an output power in excess of 1 W and 36-percent power-added efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d3aa444ac3d76f9cd091be9bd8f77d
https://doi.org/10.1109/t-ed.1985.22425
https://doi.org/10.1109/t-ed.1985.22425
Publikováno v:
IEEE Transactions on Electron Devices. 21:624-630
A novel quasi-planar and highly reliable varactor configuration has been developed to batch fabricate fully passivated GaAs Schottky varactors with near ideal characteristics and state of the art performance. Typically, they exhibit at zero bias a ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bee3584b3eb0b0397442bbd460f834e
https://doi.org/10.1109/t-ed.1974.17980
https://doi.org/10.1109/t-ed.1974.17980
Autor:
J.A. Calviello
Publikováno v:
IEEE Transactions on Electron Devices. 26:1273-1281
The purpose of this paper is to discuss key topics related to low-noise mixers, high efficiency multipliers, the use of quasi-optical techniques to reduce circuit losses, and the development of very high-Q devices applicable to the millimeter and sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99220eaa7bc17f241129cccb935b281
https://doi.org/10.1109/t-ed.1979.19593
https://doi.org/10.1109/t-ed.1979.19593
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 30:2184-2189
A subharmonic mixer is described that has an instantaneous bandwidth of 11 to 14 GHz centered near 95 GHz. A wide bandwidth is achieved by the close integration of a low-capacitance diode mount, printed circuit matching elements, and simple yet effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1e6e349134d446b7bc740ca7c8e8d2
https://doi.org/10.1109/tmtt.1982.1131405
https://doi.org/10.1109/tmtt.1982.1131405
Publikováno v:
Electronics Letters. 22:510-512
An all-refractory-metal GaAs MESFET (ARFET) making use of a Ta Schottky barrier with a thick gold overlayer for the source, gate and drain, and very highly doped N+-layers (2x1019 cm-3) to achieve low-resistivity nonalloyed ohmic contacts, has been s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf08ea2ae8a8e6af0227edb8dac15ae6
https://doi.org/10.1049/el:19860348
https://doi.org/10.1049/el:19860348
Publikováno v:
1981 International Electron Devices Meeting.
A high-performance GaAs beam-lead Quasi-Mott Schottky barrier mixer diode (patent pending) for the millimeter and submillimeter application has been developed. Typically these devices have a zero-volt bias capacitance in the 0.005 to 0.010 pf range,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e417a108f8baa44cc56d0d159cacc5a7
https://doi.org/10.1109/iedm.1981.190182
https://doi.org/10.1109/iedm.1981.190182
Publikováno v:
1970 International Electron Devices Meeting.
P-N and M-S epitaxial GaAs varactors have been developed for broad-band parametric amplifiers. At, zero bias the varactors have a junction capacitance of 0.15 pF, and a cutoff frequency of 700 GHz when measured at 70 GHz. Millimeter wave measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f40d110b4d9a6cb75a619979f8175c
https://doi.org/10.1109/iedm.1970.188304
https://doi.org/10.1109/iedm.1970.188304
Autor:
J.A. Calviello
Publikováno v:
Proceedings of the IEEE. 51:611-612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b775bcd2c77d7bb793fc9106ee3372c
https://doi.org/10.1109/proc.1963.2219
https://doi.org/10.1109/proc.1963.2219