Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J.-Y. Jason Lin"'
Publikováno v:
IEEE Electron Device Letters. 33:1520-1522
In this letter, we have analyzed the area, perimeter, and corner leakage current components of lateral p+/n-Ge-based diodes with a GeO2 isolation layer, which were fabricated at temperatures below 500 °C. In addition, the effects of forming gas anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e78315138771d8c3df37e176f36b25
https://doi.org/10.1109/led.2012.2211856
https://doi.org/10.1109/led.2012.2211856
Publikováno v:
IEEE Electron Device Letters. 33:1541-1543
We report a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af0d7dc0fd673a92e95d0b00f1c9d90
https://doi.org/10.1109/led.2012.2214758
https://doi.org/10.1109/led.2012.2214758
Publikováno v:
IEEE Electron Device Letters. 33:761-763
Recent experiments have demonstrated a reduction of Fermi-level pinning in contacts to n-type Ge by the insertion of a thin tunnel barrier at the interface. The presence of fixed charge in these interface layers can contribute to Schottky-barrier red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cfd585f16b1d6125ae86fb82400e93
https://doi.org/10.1109/led.2012.2191386
https://doi.org/10.1109/led.2012.2191386
Publikováno v:
IEEE Electron Device Letters. 31:1077-1079
Recent experiments have demonstrated the possibility of reducing the effect of Fermi level pinning by using a thin dielectric tunneling barrier. For contacts to n-Ge where the Fermi level of metals pins near the valence band, alleviation of Fermi pin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4f65ff0aa5ffa3bb5bba14827c0425
https://doi.org/10.1109/led.2010.2058838
https://doi.org/10.1109/led.2010.2058838
Autor:
Blanka Magyari-Köpe, J.-Y. Jason Lin, Hugo Bender, O. Richard, Johan Dekoster, Dennis Lin, Robert Chen, Yoshio Nishi, Federica Gencarelli, Suyog Gupta, Bin Yang, Benjamin Vincent, Matty Caymax, Krishna C. Saraswat
Publikováno v:
2012 International Electron Devices Meeting.
We present a detailed theoretical analysis to motivate GeSn for CMOS logic. High quality GeSn films have been obtained on Ge-on-Si using a CVD process. A novel surface passivation scheme is presented to achieve record low trap densities at high-ĸ/Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b32b95bb4ff638caba9ce1bf9dcf708
https://doi.org/10.1109/iedm.2012.6479052
https://doi.org/10.1109/iedm.2012.6479052
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
We achieve a 70x reduction in specific contact resistivity to 1.28E-6Ωcm² using metal-insulator-semiconductor (MIS) contacts with TiO2. The effectiveness of this method is understood in terms of the electron barrier height, band offsets, and the me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476cfc2eaf8a4d1dc8c900f202f3bcfe
https://doi.org/10.1109/istdm.2012.6222473
https://doi.org/10.1109/istdm.2012.6222473
Autor:
Woo-Shik Jung, Ju Hyung Nam, Seunghwa Ryu, Aneesh Nainani, Krishna C. Saraswat, J.-Y. Jason Lin
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
To date, it is a major challenge to achieve in Ge n-MOSFETs low parasitic resistance and ultra shallow n+-p junction. Many studies indicate that vacancies that are present in n-doped Ge i) form electrically neutral donor-vacancy (DnV) pairs that redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ac5d649bee31ed05e7e70f01703846
https://doi.org/10.1109/istdm.2012.6222434
https://doi.org/10.1109/istdm.2012.6222434
Autor:
J.-Y. Jason Lin, Shurong Liang, Suyog Gupta, Arunanshu M. Roy, W. P. Maszara, Yoshio Nishi, Krishna C. Saraswat, Bin Yang
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
We report a low specific contact resistivity of 5.5 x 10-7 Ωcm2 in nickel germanide (NiGe) contacts on n+ Ge. Data fitting with the contact resistivity model by A.M. Roy et al. (2010) suggests SBH of ~0.44eV for NiGe and ~0.55eV for Al/Ti contacts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1741c76978b723b94cb486349c360a
https://doi.org/10.1109/istdm.2012.6222472
https://doi.org/10.1109/istdm.2012.6222472
Autor:
Aneesh Nainani, Mario G. Ancona, J.B. Boos, Krishna C. Saraswat, Ze Yuan, Brian R. Bennett, J.-Y. Jason Lin
Publikováno v:
69th Device Research Conference.
III–V semiconductors are considered as promising candidates to replace silicon as the channel material in future technology nodes for transistors [1]. III–V n-channel MOSFETs have been extensively studied [2–4], showing high electron mobility.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::becb8f3a7ecd0c6c0a0e2ff287c211c6
https://doi.org/10.1109/drc.2011.5994457
https://doi.org/10.1109/drc.2011.5994457
Autor:
Minghwei Hong, S. Wang, J.-Y. Jason Lin, Guotong Du, J.K. Gamelin, J. P. Mannaerts, Fanghai Zhao, Xiaobo Zhang, Dingsan Gao, B. Wu
Publikováno v:
Optical and Quantum Electronics. 25:745-749
We report the results of a room-temperature CW top surface-emitting laser whose light-emitting window is much smaller than the current injection area. The lowest series resistance of device is 50 Ω. It maintains single transverse mode at high curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12c618c9b26e72ca5fc2ebdb39f121c
https://doi.org/10.1007/bf00430563
https://doi.org/10.1007/bf00430563