Zobrazeno 1 - 10
of 154
pro vyhledávání: '"J.-T. Zettler"'
Autor:
Günther Tränkle, Michael Kneissl, Veit Hoffmann, Arne Knauer, Markus Weyers, C. Brunner, J.-T. Zettler, Sven Einfeldt, K. Haberland
Publikováno v:
Journal of Crystal Growth. 315:5-9
Wafer bowing has a strong impact on the wavelength homogeneity of InGaN based light emitters due to the strong temperature dependence of the In incorporation. Using in-situ curvature measurements and pyrometry we have studied the impact of growth con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf67ed2f6953e83a979f17529ca70c3
https://doi.org/10.1016/j.jcrysgro.2010.09.048
https://doi.org/10.1016/j.jcrysgro.2010.09.048
Publikováno v:
Semiconductor Science and Technology. 33:045014
In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13bfb886d94c8b31750a5b274c081627
https://doi.org/10.1088/1361-6641/aab410
https://doi.org/10.1088/1361-6641/aab410
Publikováno v:
Journal of Crystal Growth. 310:2432-2438
Wafer bowing measurements have been recently developed into an efficient tool for MOVPE and MBE process optimization. In combination with temperature and reflectance measurements they are applied for direct but mostly qualitative evaluation of III-ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::611619b4e590bb7a7164792e9d782c8c
https://doi.org/10.1016/j.jcrysgro.2008.01.024
https://doi.org/10.1016/j.jcrysgro.2008.01.024
Autor:
T. Schenk, J.-T. Zettler, E. Steimetz, Veit Hoffmann, Arne Knauer, Markus Weyers, Frank Brunner
Publikováno v:
Journal of Crystal Growth. 298:202-206
We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as well as AlGaN and InGaN heterostructures with different material compositions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::524d1bc6366d503ba018cb5582d427cb
https://doi.org/10.1016/j.jcrysgro.2006.10.186
https://doi.org/10.1016/j.jcrysgro.2006.10.186
Publikováno v:
Journal of Crystal Growth. 298:23-27
For (Al x Ga 1-x ) 1-y In y P growth on GaAs for opto-electronic devices in metal-organic vapour phase epitaxy an accurate control of the aluminium content x and of the indium content y is crucial. Therefore, we applied an in situ curvature sensor to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edabd681838b053e93e0ca40f43ece24
https://doi.org/10.1016/j.jcrysgro.2006.10.212
https://doi.org/10.1016/j.jcrysgro.2006.10.212
Publikováno v:
Semiconductor Science and Technology. 21:L45-L48
The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change in substrate curvature due to the incorporated strain induced by the only 6 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d004bca8ab73bc38017cf9ff03add4ac
https://doi.org/10.1088/0268-1242/21/9/l01
https://doi.org/10.1088/0268-1242/21/9/l01
Autor:
Philip A. Shields, E. Steimetz, Sergey Stepanov, Wang Nang Wang, Chaowang Liu, J.-T. Zettler, A. Gott, Evgeny Zhirnov
Publikováno v:
physica status solidi c. 3:1884-1887
Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::090fdb4569bad438661c2035e4d7875a
https://doi.org/10.1002/pssc.200565197
https://doi.org/10.1002/pssc.200565197
Autor:
Y. Dikme, N. Kaluza, R. Steins, H. L. Bay, André Strittmatter, Rolf H. Jansen, Zdeněk Sofer, L. Reißmann, Hilde Hardtdegen, Michael Heuken, Dieter Bimberg, Holger Kalisch, J.-T. Zettler, Y. S. Cho
Publikováno v:
physica status solidi (a). 203:1645-1649
This paper reports on the in situ determination of the Al-content in Al x Ga 1-x N layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65bce3267d229554d7cc8da0e7302add
https://doi.org/10.1002/pssa.200565313
https://doi.org/10.1002/pssa.200565313
Publikováno v:
Journal de physique / 4 132, 177-183 (2006). doi:10.1051/jp4:2006132034
This paper reports on how the observation of the morphology development and growth by in situ optical methods as well as the determination of substrate temperature can be employed to tailor the characteristics of GaN and to control growth in MOVPE (m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bc58c0723b5d86ac96759bf08e5afdb
https://doi.org/10.1051/jp4:2006132034
https://doi.org/10.1051/jp4:2006132034
Publikováno v:
Journal of Crystal Growth. 287:637-641
The influence of composition changes in (Al x Ga 1− x ) 1− y In y P grown on GaAs in metal-organic vapour-phase epitaxy on the in situ measured optical signals reflectance anisotropy (RA) and normalized reflectance (NR) is studied. The aluminium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8725e12e2155cff358e659fd5bb3accf
https://doi.org/10.1016/j.jcrysgro.2005.10.120
https://doi.org/10.1016/j.jcrysgro.2005.10.120