Zobrazeno 1 - 10
of 93
pro vyhledávání: '"J.-R. Vaille"'
Autor:
C. S. Dyer, K. A. Ryden, P. A. Morris, A. D. P. Hands, P. J. McNulty, J. -R. Vaille, L. Dusseau, G. Cellere, A. Paccagnella, H. J. Barnaby, A. R. Benedetto, R. Velazco, R. Possamai Bastos, D. Brewer, J. L. Barth, K. A. LaBel, M. J. Campola, Y. Zheng, M. A. Xapsos
Publikováno v:
IEEE Transactions on Nuclear Science. 70:200-215
Akademický článek
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Autor:
Jerome Boch, Nicolas Roche, Fabien Roig, P. Ribeiro, B. Azais, Laurent Dusseau, Robert Ecoffet, P. Calvel, G. Auriel, R. Marec, J.-R. Vaille, Francoise Bezerra, A. Privat, Frédéric Saigné
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1603-1610. ⟨10.1109/TNS.2014.2306211⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1603-1610. ⟨10.1109/TNS.2014.2306211⟩
Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) f
Autor:
J.-R. Vaille, Andre Touboul, Frédéric Saigné, S. Bourdarie, A. Privat, G. Chaumont, A. Michez, Richard Arinero, Frédéric Wrobel, N. Chatry, Eric Lorfevre
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (6), pp.4166-4174. ⟨10.1109/TNS.2013.2287974⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (6), pp.4166-4174. ⟨10.1109/TNS.2013.2287974⟩
Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defec
Akademický článek
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Autor:
Laurent Dusseau, P. Garcia, Eric Lorfevre, Julien Mekki, J.-R. Vaille, C. Deneau, Francoise Bezerra, Robert Ecoffet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.939-944. ⟨10.1109/TNS.2011.2128883⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.939-944. ⟨10.1109/TNS.2011.2128883⟩
Displacement damage dose was measured over 26 months on the CARMEN-2 experiment using the feedback loop of an Optically Stimulated Luminescence (OSL) sensor. These in-flight results are analyzed and discussed addressing the issue of temperature depen
Autor:
Philippe Cocquerez, B. Azais, Andre Touboul, Luigi Dilillo, J.L. Autran, M Lacourty, P Rech, C. Chatry, Frédéric Wrobel, Pierre Chadoutaud, Thien Lam-Trong, J.-R. Vaille, F. Saigne, Jean-Marc Galliere, F Laplanche, Denis Pantel
Publikováno v:
IEEE Transactions on Nuclear Science. 58:945-951
We report a stratospheric flight with a CNES balloon for which we developed a silicon detector in order to obtain data on the atmospheric radiation environment. The number of detected protons is shown to be directly correlated with the altitude. Simu
Autor:
Jerome Boch, Francoise Bezerra, S. P. Buchner, L. Dusseau, B. Azais, Y G Velo, N. J-H Roche, P. Calvel, R. Marec, J.-R. Vaille, Frédéric Saigné, G. Auriel
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (4), pp.1861-1868. ⟨10.1109/TNS.2010.2042616⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (4), pp.1861-1868. ⟨10.1109/TNS.2010.2042616⟩
A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the analog single event transients propagation in circuitry. Th
Autor:
N. Renaud, Frédéric Saigné, Jerome Boch, S. Mouton, C. Heng, D. Truyen, J.-R. Vaille, B. Sagnes, M. Briet, E. Leduc
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2001-2006
Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET.
Autor:
S. Dhombres, Eric Lorfevre, A. Michez, D. Kraehenbuehl, Jerome Boch, S. Beauvivre, Antoine Touboul, J.-R. Vaille, Frédéric Saigné, Philippe C. Adell, Francoise Bezerra
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
A thermal annealing approach is applied on irradiated CMOS active pixel sensors to investigate total dose effects and improve device lifetime. Results are discussed and help identified the sensor's sensitive areas.