Relative contributions to the emission within bundles of carbon nanocone emitters

Autor: Romaric Landfried, Ph. Teste, Darius Mofakhami, Tiberiu Minea, J.-P. Mazellier, Benjamin Seznec, Ph. Dessante, P.-L. Gautherin

Publikováno v: 33th International Vacuum Nanoelectronics Conference (IVNC 2020)
33th International Vacuum Nanoelectronics Conference (IVNC 2020), Jul 2020, Lyon, France. ⟨10.1109/IVNC49440.2020.9203448⟩

International audience; Herein, an original design of electron source based on an array of carbon nanocone bundles has been modeled. The contribution to the emission within bundles is investigated using a cold emission model based on the WKB approxim

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4685f35a179c0430dc956a49776a891
https://hal-centralesupelec.archives-ouvertes.fr/hal-02985178/document

Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

Autor: A. Montanaro, J. P. Mazellier, C. Larat, Pierre Legagneux, S. Mzali, Stephanie Molin, Odile Bezencenet

Publikováno v: SPIE Proceedings.

Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a708c15bf22cd0180fec5bbdf2ae64c
https://doi.org/10.1117/12.2237289

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Planar Double Gate Transistors with Asymmetric Independent Gates

Autor: J. Hartwich, M. Stadele, J.R. Luyken, Walter M. Weber, Erhard Landgraf, R. Kasmaier, Tarek Lutz, L. Risch, Walter Hansch, Michael Specht, Johannes Kretz, F. Hofmann, L. Dreeskornfeld, J.-P. Mazellier, G. Ilicali, W. Rosner

Publikováno v: 2005 IEEE International SOI Conference Proceedings.

Planar double-gate field effect transistors with asymmetric (p++/n++) independent gates down to 55nm physical gate lengths are successfully fabricated. A fabrication concept, epi-before-bonding, is introduced and demonstrated to be highly successful

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ea4bfb46cea47fe7c0f9b2f37bf5f5a
https://doi.org/10.1109/soi.2005.1563562