Zobrazeno 1 - 10
of 26
pro vyhledávání: '"J.-P Reynard"'
Autor:
A. Redaelli, A. Gandolfo, G. Samanni, E. Gomiero, E. Petroni, L. Scotti, A. Lippiello, P. Mattavelli, J. Jasse, D. Codegoni, A. Serafini, R. Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J.-C. Grenier, O. Weber, D. Turgis, A. Valery, S. Del Medico, V. Caubet, J.-P. Reynard, D. Dutartre, L. Favennec, A. Conte, F. Disegni, M. De Tomasi, A. Ventre, M. Baldo, D. Ielmini, A. Maurelli, P. Ferreira, F. Arnaud, F. Piazza, P. Cappelletti, R. Annunziata, R. Gonella
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 563-568 (2022)
The effect of back-end of line (BEOL) process on cell performance and reliability of Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. The microscopic evolution of the Ge-rich GST alloy during process is the focus of the fir
Externí odkaz:
https://doaj.org/article/c2fbeb39b1c14d23a0f92983e7149df3
Autor:
E. Gomiero, G. Samanni, J. Jasse, C. Jahan, O. Weber, R. Berthelon, R. Ranica, L. Favennec, V. Caubet, D. Ristoiu, J. P. Reynard, L. Clement, P. Zuliani, R. Annunziata, F. Arnaud
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 517-521 (2019)
Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impa
Externí odkaz:
https://doaj.org/article/d32a756f1cf8471fafe70bc493d62c3c
Autor:
Roberto Annunziata, O. Weber, J. Jasse, Paola Zuliani, V. Caubet, Franck Arnaud, G. Samanni, Enrico Gomiero, L. Favennec, R. Berthelon, D. Ristoiu, C. Jahan, L. Clement, J. P. Reynard, R. Ranica
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 517-521 (2019)
Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::930b1b015adb15c3586cc459f3581efb
https://doi.org/10.1109/jeds.2019.2913467
https://doi.org/10.1109/jeds.2019.2913467
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
Autor:
Roberto Annunziata, L. Favennec, F. Disegni, D. Turgis, Jean-Luc Ogier, Remi Beneyton, Xavier Federspiel, N. Cherault, Fausto Piazza, A. Gandolfo, M. Molgg, E. Ciantar, Enrico Gomiero, P.O. Sassoulas, J. P. Reynard, B. Dumont, S. Delmedico, Alexandre Villaret, Olivier Weber, A. Viscuso, Franck Arnaud, L. Clement, L. Desvoivres, Paulo Ferreira, Paolo Mattavelli, C. Gallon, R. Ranica, O. Kermarrec, J. Jasse, S. Chouteau, C. Jahan, C. Boccaccio, Paolo Cappelletti, A. Souhaite, G. Samanni, Paola Zuliani, R. Berthelon, V. Caubet, Philippe Boivin, D. Ristoiu, Alfonso Maurelli, J. C. Grenier
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
in this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9d7d45a06fe3730a77e9eea337f87a
https://doi.org/10.1109/iedm13553.2020.9371934
https://doi.org/10.1109/iedm13553.2020.9371934
Autor:
Ludovic Goffart, Gauthier Lefevre, Bernard Pelissier, Christophe Vallée, Gabriele Navarro, J. P. Reynard
Publikováno v:
ECS PRiME 2020
ECS PRiME 2020, Oct 2020, Hawaï, United States. pp.1358-1358, ⟨10.1149/ma2020-02141358mtgabs⟩
ECS PRiME 2020, Oct 2020, Hawaï, United States. pp.1358-1358, ⟨10.1149/ma2020-02141358mtgabs⟩
Phase-change materials (PCMs) based on GeSbTe alloys are well known and widely used in optical storage devices. The recent progress in scaling and material engineering made PCMs also promising candidates for high-speed non-volatile memory application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::589561fdfe7daf15176409351517a09d
https://doi.org/10.1149/ma2020-02141358mtgabs
https://doi.org/10.1149/ma2020-02141358mtgabs
Autor:
Alain Toffoli, Loic Welter, J. P. Reynard, C. Jahan, Franck Julien, E. Richard, Dann Morillon, Pascal Masson, Jean Coignus
Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
This paper presents the performance and reliability evaluation of high voltage MOS gate stacks integrated in an advanced CMOS technology platform. The aim of this study is to evaluate the compatibility of a thick silicon dioxide with a high-k metal g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1467f72c9b9b61750449a2f6180b0b
https://doi.org/10.1109/icmts.2017.7954274
https://doi.org/10.1109/icmts.2017.7954274
Autor:
Bénédicte Mortini, C. Aumont, E. Mortini, J.-P. Reynard, Jérôme Vaillant, A. Hirigoen, Axel Crocherie
Publikováno v:
Journal of Photopolymer Science and Technology. 22:707-711
This paper presents the developments of a new high refractive index material that can be used as a light guide in the back-end of CMOS image sensor to achieve optical path improvement and better light collection. Depending on the process conditions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a76f0f94186f3e9995f9faa450bdd5
https://doi.org/10.2494/photopolymer.22.707
https://doi.org/10.2494/photopolymer.22.707
Autor:
Z. Fang, Damien Lenoble, M Juhel, Y Rault, Jay T. Scheuer, J.-P Reynard, F. Lallement, Steven R. Walther, Ludovic Godet, A. Grouillet
Publikováno v:
Surface and Coatings Technology. 186:17-20
As semiconductor devices keep shrinking in size, the fabrication of ultra-shallow junctions (USJ) is becoming a key issue for future CMOS technologies. In this study, we propose for the first time to demonstrate and extensively characterize the capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a6fdfced34eb61b761ea998e5caf5b
https://doi.org/10.1016/j.surfcoat.2004.04.004
https://doi.org/10.1016/j.surfcoat.2004.04.004
Autor:
F. Lallement, J.-P Reynard, Damien Lenoble, J. Weeman, D Downey, Ludovic Godet, Timothy J. Miller, Z. Fang, A Arevalo, Daniel Distaso, Bon-Woong Koo, Jay T. Scheuer, A. Grouillet
Publikováno v:
Surface and Coatings Technology. 186:57-61
Plasma doping promises superior doping profiles and high productivity relative to traditional beamline ion implantation for future semiconductor device nodes. We present data showing ultra-shallow junction formation using VSEA's Pulsed PLAsma Doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e2273def0aa50ba8d764716254a493
https://doi.org/10.1016/j.surfcoat.2004.04.011
https://doi.org/10.1016/j.surfcoat.2004.04.011
Autor:
E. Sabouret, C. Verove, C. Chaton, Kathy Barla, B. Descouts, J. P. Reynard, J. Michailos, P. Motte
Publikováno v:
Microelectronic Engineering. 60:113-118
The FSG (fluorine-doped silicon glass) was introduced as dielectric for copper interconnects in order to take advantage of its lower dielectric constant. With a gain of 18% in the constant value, it makes the shrink of metal dimension possible for 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94ac0b0fac974af6b1a1246d30791d9a
https://doi.org/10.1016/s0167-9317(01)00586-x
https://doi.org/10.1016/s0167-9317(01)00586-x