Zobrazeno 1 - 10
of 23
pro vyhledávání: '"J.-M. Mäki"'
Autor:
A.-H. Rosendahl, A. Railo, J. M. Mäki, M. Monnius, Ilkka Miinalainen, Johanna Myllyharju, A. Laitala, R. Heljasvaara
Hypoxia-inducible factors (HIFs) induce numerous genes regulating oxygen homeostasis. As oxygen sensors of the cells, the HIF prolyl 4-hydroxylases (HIF-P4Hs) regulate the stability of HIFs in an oxygen-dependent manner. During hair follicle (HF) mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::365c877f7748311bf20f0cb4650819a2
http://urn.fi/urn:nbn:fi-fe2022091258385
http://urn.fi/urn:nbn:fi-fe2022091258385
Autor:
A. Laitala, A.S. Rosendahl, J. M. Mäki, J. Myllyharju, R. Heljasvaara, Ilkka Miinalainen, A. Railo, M. Monnius
Publikováno v:
Journal of Investigative Dermatology. 141:S204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f25f0f5b013bbb809cd6f2db49fdde93
https://doi.org/10.1016/j.jid.2021.08.329
https://doi.org/10.1016/j.jid.2021.08.329
Publikováno v:
Journal of Crystal Growth. 350:93-97
In-grown group III (cation) vacancies (V Ga , V Al , V In ) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as O N or the N vacancy (V N ). The cation vacancies and their complexes are generally deep accepto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ba61b65db09caeded524c9e41a368c6
https://doi.org/10.1016/j.jcrysgro.2011.12.031
https://doi.org/10.1016/j.jcrysgro.2011.12.031
Publikováno v:
Physica B: Condensed Matter. 407:2684-2688
The Doppler broadening of the positron annihilation radiation contains information on the chemical environment of vacancy defects trapping positrons in solids. The measured signal can, for instance, reveal impurity atoms situated next to vacancies. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::513070a3d4f41cffced436a77da47617
https://doi.org/10.1016/j.physb.2012.02.039
https://doi.org/10.1016/j.physb.2012.02.039
Publikováno v:
Journal of Crystal Growth. 312:2620-2623
We have applied positron annihilation spectroscopy to study in-grown vacancy defects in bulk GaN crystals grown by the ammonothermal method. We observe a high concentration of Ga vacancy related defects in n-type samples in spite of the low growth te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b4b7a4f011d733ce7f90b5eb4eafac
https://doi.org/10.1016/j.jcrysgro.2010.04.023
https://doi.org/10.1016/j.jcrysgro.2010.04.023
Autor:
E. N. Mokhov, Heikki Helava, Yu.N. Makarov, A.S. Segal, Boris M. Epelbaum, Matthias Bickermann, J.-M. Mäki, G. Huminic, O.V. Avdeev, S. Davis, T.Yu. Chemekova, M.G. Ramm, Filip Tuomisto
Publikováno v:
Journal of Crystal Growth. 310:3998-4001
A1. Characterization A1. Point defects A2. Growth from vapor B1. Nitrides B2. Semiconducting aluminum compounds abstract We have applied positron annihilation spectroscopy to study in-grown vacancy defects in bulk aluminium nitride (AlN) crystals gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09615f1e7779570755163ce9b9f5b62b
https://doi.org/10.1016/j.jcrysgro.2008.06.013
https://doi.org/10.1016/j.jcrysgro.2008.06.013
Publikováno v:
Physica B: Condensed Matter. :613-616
In this paper we report on the preliminary results obtained in as-grown and annealed CVD diamond with positron annihilation spectroscopy. We observe clustering of as-grown vacancy defects in annealing above 1400 ∘ C . The optical activity of the va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ba5dffc9bf6765708ff6bfc08bbe19
https://doi.org/10.1016/j.physb.2007.09.034
https://doi.org/10.1016/j.physb.2007.09.034
Publikováno v:
Mäki, J M, Tuomisto, F, Varpula, A, Fisher, D, Khan, R U A & Martineau, P M 2011, ' Time dependence of charge transfer processes in diamond studied with positrons ', Physical Review Letters, vol. 107, no. 21, 217403 . https://doi.org/10.1103/PhysRevLett.107.217403
We have developed a method called optical transient positron spectroscopy and apply it to study the optically induced carrier trapping and charge transfer processes in natural brown type IIa diamond. By measuring the positron lifetime with continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f487451df0cc708e5a20cbebf73cdb02
https://cris.vtt.fi/en/publications/325c98be-fda9-49ec-8c05-1042c7f7f01f
https://cris.vtt.fi/en/publications/325c98be-fda9-49ec-8c05-1042c7f7f01f
Publikováno v:
Physical Review B. 82
Group-III nitrides in their wurtzite crystal structure are characterized by large spontaneous polarization and significant piezoelectric contributions in heterostructures formed of these materials. Polarization discontinuities in polar heterostructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74721cf8a9cff720901f91e23542438c
https://doi.org/10.1103/physrevb.82.041307
https://doi.org/10.1103/physrevb.82.041307
Autor:
Filip Tuomisto, Sami Suihkonen, Pekka T. Törmä, Markku Sopanen, Muhammad Ali, J.-M. Mäki, Olli Svensk
We have applied positron annihilation spectroscopy to study 400 – 500 nm InGaN-based LED structures, as well as InGaN and AlGaN materials with varying In and Al contents. We find that the effect of adding In to GaN on the annihilation parameters ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3b3deb8322a7aedbee4a8d5270b4a83
https://aaltodoc.aalto.fi/handle/123456789/26997
https://aaltodoc.aalto.fi/handle/123456789/26997