Zobrazeno 1 - 10
of 39
pro vyhledávání: '"J.-M. Dieudonne"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:1466-1474
The development of monolithic millimeter-wave Schottky diode mixers based on technological parameters is described. The complete equivalent circuit of the monolithic Schottky diode is calculated taking into account the semiconductor layer structure a
Publikováno v:
Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A method of simultaneously fabricating MESFETs with a maximum frequency of oscillation (f/sub max/) of 70 GHz and Schottky diodes with a gain-bandwidth product (f/sub T/) of approximately=2300 GHz to produce a 60-GHz mixer is given. A deep selective
Publikováno v:
IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
A fully monolithic GaAs-94 GHz downconverter consisting of a single balanced diode mixer and a two-stage IF amplifier has been fabricated in a MESFET technology on a single chip. A conversion gain of 14.5 dB combined with a double-sideband noise figu
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
The design, fabrication, and evaluation of a monolithic 29-GHz dielectrically stabilized voltage-controlled oscillator (DVO) using a MESFET as the active device are described. The novel design yields an oscillator with excellent phase noise behavior
A low noise heterodyne 89 GHz MMIC module for the multifrequency imaging microwave radiometer (MIMR)
Publikováno v:
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
The contribution describes the topology of the heterodyne 89 GHz channel of the Multifrequency Imaging Microwave Radiometer (MIMR). Several components such as double sideband 89 GHz mixer, 44.5 GHz local oscillator, frequency doubler, and IF low nois
Autor:
A. Klaassen, J.-M. Dieudonne
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
We report on the design, fabrication and evaluation of 77 GHz monolithically integrated MMIC switches. Single-pole double-throw (SPDT) and single-pole three-throw (SP3T) switches were realized with Schottky diodes in a 0.25 /spl mu/m GaAs MESFET tech
Publikováno v:
IEEE NTC,Conference Proceedings Microwave Systems Conference.
A number of civil applications such as motion sensors and communications systems are planned to use the Ka-band frequency range. An MMIC chip set for the realization of the millimeter-wave front-end has been developed. The key MMIC circuit functions
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
A multipurpose MMIC gate mixer has been designed, fabricated and measured. The mixer exhibits a maximum conversion gain of about 0 dB in the frequency range of 32 GHz-38 GHz with an intermediate frequency (IF) of 100 MHz and an IF load of 50 /spl Ome
Autor:
J. Schroth, U. Guttich, A. Colquhoun, J.-M. Dieudonne, B. Adelseck, J. Splettstober, A. Klaassen
Publikováno v:
1994 24th European Microwave Conference.
The feasability of monolithic millimetre-wave front-ends based on a GaAs MESFET technology has been demonstrated. Different specific MMIC circuit functions have been fabricated using a 0.25 ?m GaAs MESFET technology. Mixer, doubler and switch MMIC ci
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 37:2142-2147
A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency f/sub T/ of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a