Výsledky vyhledávání

Copper-Line Topology Impact on the Reliability of SiOCH Low-$k$ for the 45-nm Technology Node and Beyond

Autor: J.-M. Chaix, C. Monget, F. Volpi, M. Vilmay, David Roy

Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2009, 9 (2), pp.120-127. ⟨10.1109/tdmr.2009.2020089⟩

International audience; SiOCH low-k dielectrics introduction in copper interconnects associated to the critical dimensions reduction in sub-45-nm node technologies is a challenge for reliability engineers. Circuit wear-out linked to low-k dielectric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4387d11b24bbf83a041879cdd0a90fe6
https://doi.org/10.1109/tdmr.2009.2020089

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La métallurgie des poudres appliquée aux multimatériaux

Autor: Y. Le Guennec, Pierre Doremus, Didier Bouvard, J. M. Auger, Y. Kamdem, J.-M. Chaix, F. Dore, C. Pascal, L. Lazzarotto, F. Valdivieso, P. Goeuriot, A. Thomazic

Publikováno v: Mécanique & Industries. 10:151-156

Powder metallurgy applied to multimaterials. Marly laboratories and technical centres have begun to work Oil the possibility of creating multimaterial composites rising Powder Metallurgy. This process call be used to avoid assembly problems and to ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::035df800726d0e3121498849f4f6cbec
https://doi.org/10.1051/meca/2009042

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Al-ZrO2model composites elaboration by powder metallurgy

Autor: L. Salvo, Laurent Babout, N. Glandut, J.-M. Chaix, Eric Maire

Publikováno v: Revue de Métallurgie. 99:1043-1049

This paper describes a method for producing model composites by the powder metallurgy route in order to control the spatial distribution of the reinforcement in a metallic matrix. The materials are fabricated by successive steps including mixing and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48f0df0897202347bcf15040e313167a
https://doi.org/10.1051/metal:2002151

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L’analyse d’images pour comprendre et maîtriser le frittage

Autor: J.-M. Chaix

Publikováno v: Revue de Métallurgie. 97:163-177

Pour maitriser toujours mieux la microstructure des materiaux frittes, il faut comprendre son evolution pendant le frittage. L’analyse d’images de sections polies de materiaux frittes permet une description quantitative de cette evolution. Cet ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d658d0710ddb6c9fb29a86a935b7583
https://doi.org/10.1051/metal/200097020163

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Computer simulation of particle rearrangement in the presence of liquid

Autor: Suk-Joong L. Kang, J. M. Chaix, C. L.Martin, C. H. Allibert, S. M. Lee

Publikováno v: Metals and Materials. 5:197-203

A model was developed to describe the motion of particles which are connected by liquid bridges. The model takes into account capillary force, particles inertia, viscous drag of liquid, and elastic collision. Below a critical thickness of the liquid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ccac7e2a6397cfcb805cb1e555a3486
https://doi.org/10.1007/bf03026053

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On the rose of directions measurements on the discrete grid of an automatic image analyser

Autor: F. Grillon, J. M. Chaix

Publikováno v: Journal of Microscopy. 184:208-213

Estimation of the rose of directions is a simple way to analyse the anisotropy of structures made of lines, objects or interconnected phases. However, when used on an automatic image analyser with a square frame, the rose of directions obtained from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::feb702e78dda0307ffc4257bf3aeeb0b
https://doi.org/10.1046/j.1365-2818.1996.1190672.x

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A method for low-K dielectric breakdown physical localization

Autor: Xavier Federspiel, F. Volpi, G. Beylier, E. Chery, J.-M. Chaix

Publikováno v: 2012 IEEE International Integrated Reliability Workshop Final Report.

This paper reports results obtained on a new test structure developed to easily locate low-k dielectric breakdown spots. This spot can be localized by using a comb-serpentine test structure, and by monitoring the change in resistance between pads.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4da98aa10980d04e8f5a3f167a89909
https://doi.org/10.1109/iirw.2012.6468934

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Back-end dielectrics reliability under unipolar and bipolar AC-stress

Autor: J.-M. Chaix, David Roy, G. Beylier, F. Volpi, E. Chery, C. Besset, Xavier Federspiel

Publikováno v: IEEE International Reliability Physics
IEEE International Reliability Physics, 2012, pp.3A.5.1-3A.5.6. ⟨10.1109/IRPS.2012.6241804⟩

International audience; The present paper compares the effects of AC and DC electrical stress on low-kappa SiOCH and high-kappa ZrO2 and Ta2O5 back-end dielectrics. A wide panel of stress conditions has been assessed, mixing DC, unipolar/bipolar and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a99844da80e681bfdc5f5de9f922edb
https://doi.org/10.1109/irps.2012.6241804

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