ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS2

Autor: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J. -L. Lazzari

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 34-37 (2019)

Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon d

Externí odkaz: https://doaj.org/article/f1a54e39f98a41278368c304b8883e45

High Sensitive, Selective and Low Cost Meso-Porous-Based Gas Sensor for No2 Detection at Room Temperature

Autor: H mhamdi, k azaiez, Rabia Benabderrahmane, T Fiorido, J-L Lazzari, m Bendahan, W Dimassi

Publikováno v: SSRN Electronic Journal.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5904677b48f74189268d5e230b301927
https://doi.org/10.2139/ssrn.4255593

Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation

Autor: R. Benabderrahmane Zaghouani, M. Alaya, J.-L. Lazzari, H. Nouri, W. Dimassi

Publikováno v: Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2018, 29 (20), pp.17731-17736. ⟨10.1007/s10854-018-9879-1⟩
Journal of Materials Science: Materials in Electronics, 2018, 29 (20), pp.17731-17736. ⟨10.1007/s10854-018-9879-1⟩

International audience; In this work, we report on the encapsulation of WO 3-decorated porous silicon aluminum oxide (Al 2 O 3). Porous layers, elaborated for different current densities, are decorated by quasi-spherical WO 3 nanoparticles with diffe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdab24e6e84aa6dd9d0eb62595d9cfe1
https://hal.archives-ouvertes.fr/hal-01958616/document

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Resonant tunneling transport in AlzGa1−zN/InxGa1−xN/AlzGa1−zN/InyGa1−yN quantum structures

Autor: A. Rached, A. Bhouri, J.-L. Lazzari

Publikováno v: Journal of Physics D: Applied Physics. 48:385102

We present a room temperature simulation of the vertical electron transport in the pseudomorphic quantum stack Al0.5G0.5N/InxGa1−xN/Al0.5G0.5N/In0.1Ga0.9N/GaN, which is designed with a 6 nm thick lateral In0.1Ga0.9N/GaN n-type corrected spacer. Usi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec157b6c5232ede1bdb31046e2531e8e
https://doi.org/10.1088/0022-3727/48/38/385102